Invention Grant
- Patent Title: Semiconductor heterostructure diodes
- Patent Title (中): 半导体异质结二极管
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Application No.: US13533339Application Date: 2012-06-26
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Publication No.: US08541818B2Publication Date: 2013-09-24
- Inventor: Yifeng Wu , Umesh Mishra , Primit Parikh , Ilan Ben-Yaacov
- Applicant: Yifeng Wu , Umesh Mishra , Primit Parikh , Ilan Ben-Yaacov
- Applicant Address: US CA Goleta
- Assignee: Transphorm Inc.
- Current Assignee: Transphorm Inc.
- Current Assignee Address: US CA Goleta
- Agency: Fish & Richardson P.C.
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L29/739
Abstract:
Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2 DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2 DEG, forming an ohmic contact with the layer containing the 2 DEG.
Public/Granted literature
- US20120267640A1 SEMICONDUCTOR HETEROSTRUCTURE DIODES Public/Granted day:2012-10-25
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