Invention Grant
US08546758B2 Food quality examination device, food component examination device, foreign matter component examination device, taste examination device, and changed state examination device 有权
食品质量检测装置,食品成分检查装置,异物成分检查装置,味觉检查装置和状态检查装置

  • Patent Title: Food quality examination device, food component examination device, foreign matter component examination device, taste examination device, and changed state examination device
  • Patent Title (中): 食品质量检测装置,食品成分检查装置,异物成分检查装置,味觉检查装置和状态检查装置
  • Application No.: US13119619
    Application Date: 2009-07-24
  • Publication No.: US08546758B2
    Publication Date: 2013-10-01
  • Inventor: Youichi NagaiYasuhiro Iguchi
  • Applicant: Youichi NagaiYasuhiro Iguchi
  • Applicant Address: JP Osaka
  • Assignee: Sumitomo Electric Industries, Ltd.
  • Current Assignee: Sumitomo Electric Industries, Ltd.
  • Current Assignee Address: JP Osaka
  • Agency: Fish & Richardson P.C.
  • Priority: JP2008-243181 20080922
  • International Application: PCT/JP2009/063247 WO 20090724
  • International Announcement: WO2010/032553 WO 20100325
  • Main IPC: G01J5/20
  • IPC: G01J5/20 H01L29/861
Food quality examination device, food component examination device, foreign matter component examination device, taste examination device, and changed state examination device
Abstract:
A food quality examination device using a high-sensitivity light-receiving element. The light-receiving element includes a III-V compound semiconductor stacked structure including an absorption layer having a pn-junction therein, wherein the absorption layer has a multiquanturn well structure composed of group III-V compound semiconductors, the pn-junction is formed by selectively diffusing an impurity element into the absorption layer, a diffusion concentration distribution control layer composed of III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate,the bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V semiconductor substrate,the concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is decreased to be 5×1016/cm3 or less toward the absorption layer.
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