Invention Grant
- Patent Title: Method for fabricating micro and nanostructures in a material
- Patent Title (中): 在材料中制造微结构和纳米结构的方法
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Application No.: US12824128Application Date: 2010-06-25
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Publication No.: US08557612B2Publication Date: 2013-10-15
- Inventor: Michael David Henry , Michael Shearn , Axel Scherer
- Applicant: Michael David Henry , Michael Shearn , Axel Scherer
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology
- Current Assignee: California Institute of Technology
- Current Assignee Address: US CA Pasadena
- Agency: Steinfl & Bruno, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method to determine minimum etch mask dosage or thickness as a function of etch depth or maximum etch depth as a function of etch mask implantation dosage or thickness, for fabricating structures in or on a substrate through etch masking via addition or removal of a masking material and subsequent etching.
Public/Granted literature
- US20110020960A1 METHOD FOR FABRICATING MICRO AND NANOSTRUCTURES IN A MATERIAL Public/Granted day:2011-01-27
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