公开(公告)号：US20120264237A1

公开(公告)日：2012-10-18

申请号：US13159335

申请日：2011-06-13

Applicant: Michael SHEARN ,  Michael David HENRY ,  Axel SCHERER

Inventor： Michael SHEARN ,  Michael David HENRY ,  Axel SCHERER

IPC: H01L21/66

CPC classification number: H01L21/3065 ,  B81B2207/056 ,  B81C1/00111 ,  H01L21/30608 ,  H01L21/3081 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/32155

Abstract: A method for designing, fabricating, and predicting a desired structure in and/or on a host material through defining etch masks and etching the host material is provided. The desired structure can be micro- or nanoscale structures, such as suspended nanowires and corresponding supporting pillars, and can be defined one layer at a time. Arbitrary desired structures can also be defined and obtained through etching. Further, given the desired structure, a starting structure can be predicted where etching of the starting structure yields the desired structure.

Abstract translation: 提供了一种通过限定蚀刻掩模和蚀刻主体材料来设计，制造和预测主体材料中和/或主体材料上的所需结构的方法。 所需的结构可以是微结构或纳米级结构，例如悬浮的纳米线和相应的支撑柱，并且可以一次定义一层。 也可以通过蚀刻来定义和获得任意的所需结构。 此外，给定所需的结构，可以预测起始结构的蚀刻产生所需结构的起始结构。

公开(公告)号：US08557613B2

公开(公告)日：2013-10-15

申请号：US13159335

申请日：2011-06-13

Applicant: Michael Shearn ,  Michael David Henry ,  Axel Scherer

Inventor： Michael Shearn ,  Michael David Henry ,  Axel Scherer

IPC: H01L21/00

CPC classification number: H01L21/3065 ,  B81B2207/056 ,  B81C1/00111 ,  H01L21/30608 ,  H01L21/3081 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/32155

Abstract: A method for designing, fabricating, and predicting a desired structure in and/or on a host material through defining etch masks and etching the host material is provided. The desired structure can be micro- or nanoscale structures, such as suspended nanowires and corresponding supporting pillars, and can be defined one layer at a time. Arbitrary desired structures can also be defined and obtained through etching. Further, given the desired structure, a starting structure can be predicted where etching of the starting structure yields the desired structure.

Abstract translation: 提供了一种通过限定蚀刻掩模和蚀刻主体材料来设计，制造和预测主体材料中和/或主体材料上的所需结构的方法。 所需的结构可以是微结构或纳米级结构，例如悬浮的纳米线和相应的支撑柱，并且可以一次定义一层。 也可以通过蚀刻来定义和获得任意的所需结构。 此外，给定所需的结构，可以预测起始结构的蚀刻产生所需结构的起始结构。

公开(公告)号：US08557612B2

公开(公告)日：2013-10-15

申请号：US12824128

申请日：2010-06-25

Applicant: Michael David Henry ,  Michael Shearn ,  Axel Scherer

Inventor： Michael David Henry ,  Michael Shearn ,  Axel Scherer

IPC: H01L21/00

CPC classification number: H01L21/3086 ,  B81B2203/0361 ,  B81C1/00031 ,  H01L21/3065 ,  H01L21/3081

Abstract: A method to determine minimum etch mask dosage or thickness as a function of etch depth or maximum etch depth as a function of etch mask implantation dosage or thickness, for fabricating structures in or on a substrate through etch masking via addition or removal of a masking material and subsequent etching.

Abstract translation: 确定作为蚀刻深度或最大蚀刻深度的函数的最小蚀刻掩模剂量或厚度作为蚀刻掩模注入剂量或厚度的函数的方法，用于通过添加或除去掩蔽材料通过蚀刻掩模来制造在衬底中或衬底上的结构 和随后的蚀刻。

公开(公告)号：US20110020960A1

公开(公告)日：2011-01-27

申请号：US12824128

申请日：2010-06-25

Applicant: Michael David HENRY ,  Michael Shearn ,  Axel Scherer

Inventor： Michael David HENRY ,  Michael Shearn ,  Axel Scherer

IPC: H01L21/66

CPC classification number: H01L21/3086 ,  B81B2203/0361 ,  B81C1/00031 ,  H01L21/3065 ,  H01L21/3081

Abstract: A method to determine minimum etch mask dosage or thickness as a function of etch depth or maximum etch depth as a function of etch mask implantation dosage or thickness, for fabricating structures in or on a substrate through etch masking via addition or removal of a masking material and subsequent etching.

Abstract translation: 确定作为蚀刻深度或最大蚀刻深度的函数的最小蚀刻掩模剂量或厚度作为蚀刻掩模注入剂量或厚度的函数的方法，用于通过添加或除去掩蔽材料通过蚀刻掩模来制造在衬底中或衬底上的结构 和随后的蚀刻。