Invention Grant
US08561004B2 Ring power gating with distributed currents using non-linear contact placements
有权
使用非线性触点放置的分布电流的环形电源门控
- Patent Title: Ring power gating with distributed currents using non-linear contact placements
- Patent Title (中): 使用非线性触点放置的分布电流的环形电源门控
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Application No.: US12758525Application Date: 2010-04-12
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Publication No.: US08561004B2Publication Date: 2013-10-15
- Inventor: Stephen V. Kosonocky
- Applicant: Stephen V. Kosonocky
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Abel Law Group, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F9/455

Abstract:
A power gate includes a series of electrical contacts along at least a portion of an integrated circuit and a series of power gate transistors electrically coupled to the electrical contacts on the integrated circuit to form a power gate boundary, e.g., at the integrated circuit periphery. The electrical contacts along at least a portion of a running length of the power gate boundary define a substantially non-linear profile. The non-linear profile provides increased contact density which improves current balancing across the electrical contacts and current throughput through the power gate. The non-linear profile is a sinusoidal or zigzag pattern with intermediate offset bump contacts. The contact profiles along the power gate boundary can include both linear and non-linear profiles.
Public/Granted literature
- US20110186930A1 RING POWER GATING WITH DISTRIBUTED CURRENTS USING NON-LINEAR C4 CONTACT PLACEMENTS Public/Granted day:2011-08-04
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