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US08564094B2 Capacitors including at least two portions of a metal nitride material, methods of forming such structures, and semiconductor devices including such structures 有权
包括金属氮化物材料的至少两部分的电容器，形成这种结构的方法以及包括这种结构的半导体器件

  • Patent Title: Capacitors including at least two portions of a metal nitride material, methods of forming such structures, and semiconductor devices including such structures
  • Patent Title (中): 包括金属氮化物材料的至少两部分的电容器，形成这种结构的方法以及包括这种结构的半导体器件
  • Application No.: US12556266
    Application Date: 2009-09-09
  • Publication No.: US08564094B2
    Publication Date: 2013-10-22
  • Inventor: Yongjun Jeff Hu
  • Applicant: Yongjun Jeff Hu
  • Applicant Address: US ID Boise
  • Assignee: Micron Technology, Inc.
  • Current Assignee: Micron Technology, Inc.
  • Current Assignee Address: US ID Boise
  • Agency: TraskBritt
  • Main IPC: H01L29/94
  • IPC: H01L29/94
Capacitors including at least two portions of a metal nitride material, methods of forming such structures, and semiconductor devices including such structures
Abstract:
Metal-insulator-metal capacitors with a bottom electrode including at least two portions of a metal nitride material. At least one of the portions of the metal nitride material includes a different material than another portion. Interconnects including at least two portions of a metal nitride material are also disclosed, at least one of the portions of the metal nitride material are formed from a different material than another portion of the metal nitride material. Methods for fabricating such MIM capacitors and interconnects are also disclosed, as are semiconductor devices including such MIM capacitors and interconnects.
Abstract(Chinese):

金属 - 绝缘体 - 金属电容器，其具有包括金属氮化物材料的至少两部分的底部电极。 金属氮化物材料的至少一部分包括与另一部分不同的材料。 还公开了包括金属氮化物材料的至少两部分的互连件，金属氮化物材料的至少一部分由与金属氮化物材料的另一部分不同的材料形成。 还公开了制造这种MIM电容器和互连的方法，以及包括这种MIM电容器和互连的半导体器件。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/86 ..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/92 ...有电位跃变势垒或表面势垒的电容器
H01L29/94 ....金属—绝缘体—半导体，例如MOS
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