Invention Grant
- Patent Title: Method of fabricating a device with a concentration gradient and the corresponding device
- Patent Title (中): 制造具有浓度梯度的装置和相应装置的方法
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Application No.: US12061403Application Date: 2008-04-02
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Publication No.: US08575011B2Publication Date: 2013-11-05
- Inventor: Daniel-Camille Bensahel , Yves Morand
- Applicant: Daniel-Camille Bensahel , Yves Morand
- Applicant Address: FR Montrouge FR Crolles
- Assignee: STMicroelectronics SA,STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics SA,STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Montrouge FR Crolles
- Agency: Gardere Wynne Sewell LLP
- Priority: FR0754226 20070403
- Main IPC: H01L21/50
- IPC: H01L21/50
Abstract:
A semiconductive device is fabricated by forming, within a semiconductive substrate, at least one continuous region formed of a material having a non-uniform composition in a direction substantially perpendicular to the thickness of the substrate.
Public/Granted literature
- US20080246121A1 METHOD OF FABRICATING A DEVICE WITH A CONCENTRATION GRADIENT AND THE CORRESPONDING DEVICE Public/Granted day:2008-10-09
Information query
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