Invention Grant
- Patent Title: Method for reducing contact resistance of CMOS image sensor
- Patent Title (中): 降低CMOS图像传感器接触电阻的方法
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Application No.: US13556869Application Date: 2012-07-24
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Publication No.: US08586404B2Publication Date: 2013-11-19
- Inventor: Kuan-Chieh Huang , Chih-Jen Wu , Chen-Ming Huang , Dun-Nian Yaung , An-Chun Tu
- Applicant: Kuan-Chieh Huang , Chih-Jen Wu , Chen-Ming Huang , Dun-Nian Yaung , An-Chun Tu
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
This description relates to a method for reducing CMOS Image Sensor (CIS) contact resistance, the CIS having a pixel array and a periphery. The method includes performing Physical Vapor Deposition (PVD) at a pixel contact hole area, annealing for silicide formation at the pixel contact hole area and performing contact filling. This description also relates to a method for reducing CMOS Image Sensor (CIS) contact resistance, the CIS having a pixel array and a periphery. The method includes implanting N+ or P+ for pixel contact plugs at a pixel contact hole area, performing Physical Vapor Deposition (PVD) at pixel contact hole area, annealing for silicide formation at the pixel contact hole area, performing contact filling and depositing a first metal film layer, wherein the first metal film layer links contact holes for a source, a drain, or a poly gate of a CMOS device.
Public/Granted literature
- US20120288982A1 METHOD FOR REDUCING CONTACT RESISTANCE OF CMOS IMAGE SENSOR Public/Granted day:2012-11-15
Information query
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