Invention Grant
- Patent Title: Wafer and method of processing wafer
- Patent Title (中): 晶圆和晶圆加工方法
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Application No.: US13328346Application Date: 2011-12-16
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Publication No.: US08592297B2Publication Date: 2013-11-26
- Inventor: Tung-Ti Yeh , Wu-Chang Lin , Chung-Yi Huang , Ya Wen Wu , Hui-Mei Jao , Ting-Chun Wang , Chia-Hung Chung
- Applicant: Tung-Ti Yeh , Wu-Chang Lin , Chung-Yi Huang , Ya Wen Wu , Hui-Mei Jao , Ting-Chun Wang , Chia-Hung Chung
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A wafer including a substrate, a dielectric layer over the substrate, and a conductive layer over the dielectric layer is disclosed. The substrate has a main portion. A periphery of the dielectric layer and the periphery of the main portion of the substrate are separated by a first distance. A periphery of the conductive layer and the periphery of the main portion of the substrate are separated by a second distance. The second distance ranges from about a value that is 0.5% of a diameter of the substrate less than the first distance to about a value that is 0.5% of the diameter greater than the first distance.
Public/Granted literature
- US20130154060A1 WAFER AND METHOD OF PROCESSING WAFER Public/Granted day:2013-06-20
Information query
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