公开(公告)号：US08748885B2

公开(公告)日：2014-06-10

申请号：US13371198

申请日：2012-02-10

Applicant: Tung-Ti Yeh ,  Chung-Yi Huang ,  Ya Wen Wu ,  Hui Mei Jao ,  Ting-Chun Wang ,  Shiu-Ko JangJian ,  Chia-Hung Chung

Inventor： Tung-Ti Yeh ,  Chung-Yi Huang ,  Ya Wen Wu ,  Hui Mei Jao ,  Ting-Chun Wang ,  Shiu-Ko JangJian ,  Chia-Hung Chung

IPC: H01L29/12

CPC classification number: H01L21/2007 ,  H01L21/67092 ,  H01L27/1464

Abstract: A semiconductor device including a first wafer assembly having a first substrate and a first oxide layer over the first substrate. The semiconductor device further includes a second wafer assembly having a second substrate and a second oxide layer over the second substrate. The first oxide layer and the second oxide layer are bonded together by van der Waals bonds or covalent bonds. A method of bonding a first wafer assembly and a second wafer assembly including forming a first oxide layer over a first substrate. The method further includes forming a second oxide layer over a second wafer assembly. The method further includes forming van der Waals bonds or covalent bonds between the first oxide layer and the second oxide layer.

Abstract translation: 一种半导体器件，包括具有第一衬底和第一衬底上的第一氧化物层的第一晶片组件。 半导体器件还包括第二晶片组件，其具有第二衬底和在第二衬底上的第二氧化物层。 第一氧化物层和第二氧化物层通过范德华力键或共价键键合在一起。 一种接合第一晶片组件和第二晶片组件的方法，包括在第一衬底上形成第一氧化物层。 该方法还包括在第二晶片组件上形成第二氧化物层。 该方法还包括在第一氧化物层和第二氧化物层之间形成范德华氏键或共价键。

公开(公告)号：US20060055928A1

公开(公告)日：2006-03-16

申请号：US10942554

申请日：2004-09-15

Applicant: Shih-Tzung Chang ,  Yu-Ku Lin ,  Shih-Ho Lin ,  Kei-Wei Chen ,  Ting-Chun Wang ,  Ching-Hwan Su ,  Ying-Lang Wang

Inventor： Shih-Tzung Chang ,  Yu-Ku Lin ,  Shih-Ho Lin ,  Kei-Wei Chen ,  Ting-Chun Wang ,  Ching-Hwan Su ,  Ying-Lang Wang

IPC: G01B11/00

CPC classification number: H01L22/34 ,  G01B21/042

Abstract: A novel test device and method for calibrating the alignment of a laser beam emitted from a laser metrology tool with respect to a target area on a substrate. The test device includes a laser-sensitive material having a calibration pattern that includes a target point. When the tool is properly adjusted, the laser beam strikes the target point and is released to production. If the laser beam misses the target point, the tool is re-adjusted and re-tested until the laser beam strikes the target point.

Abstract translation: 一种用于校准从激光计量工具发射的激光束相对于衬底上的目标区域的对准的新型测试装置和方法。 测试装置包括具有包括目标点的校准图案的激光敏感材料。 当工具被正确调整时，激光束撞击目标点并释放到生产中。 如果激光束错过目标点，则重新调整工具并重新测试直到激光束撞击目标点。

公开(公告)号：US08592297B2

公开(公告)日：2013-11-26

申请号：US13328346

申请日：2011-12-16

Applicant: Tung-Ti Yeh ,  Wu-Chang Lin ,  Chung-Yi Huang ,  Ya Wen Wu ,  Hui-Mei Jao ,  Ting-Chun Wang ,  Chia-Hung Chung

Inventor： Tung-Ti Yeh ,  Wu-Chang Lin ,  Chung-Yi Huang ,  Ya Wen Wu ,  Hui-Mei Jao ,  Ting-Chun Wang ,  Chia-Hung Chung

IPC: H01L21/44

CPC classification number: H01L21/02087 ,  H01L21/76802 ,  H01L21/76883

Abstract: A wafer including a substrate, a dielectric layer over the substrate, and a conductive layer over the dielectric layer is disclosed. The substrate has a main portion. A periphery of the dielectric layer and the periphery of the main portion of the substrate are separated by a first distance. A periphery of the conductive layer and the periphery of the main portion of the substrate are separated by a second distance. The second distance ranges from about a value that is 0.5% of a diameter of the substrate less than the first distance to about a value that is 0.5% of the diameter greater than the first distance.

Abstract translation: 公开了一种包括衬底，在衬底上的电介质层和介电层上的导电层的晶片。 基板具有主要部分。 电介质层的周边和基板的主要部分的周边分开第一距离。 导电层的周边和基板的主要部分的周边分开第二距离。 所述第二距离的范围从小于所述第一距离的所述基板的直径的0.5％的值的大约为大于所述第一距离的直径的0.5％的值。

公开(公告)号：US06769959B2

公开(公告)日：2004-08-03

申请号：US10050314

申请日：2002-01-15

Applicant: Kei-Wei Chen ,  Ting-Chun Wang ,  Shih-Tzung Chang ,  Yu-Ku Lin ,  Ying-Lang Wang ,  Ming-Wen Chen ,  Kuo-Hsiu Wei

Inventor： Kei-Wei Chen ,  Ting-Chun Wang ,  Shih-Tzung Chang ,  Yu-Ku Lin ,  Ying-Lang Wang ,  Ming-Wen Chen ,  Kuo-Hsiu Wei

IPC: B24B100

CPC classification number: B24B37/04 ,  B24B57/02

Abstract: A method and system is disclosed for reducing slurry usage in a chemical mechanical polishing operation utilizing at least one polishing pad thereof. Slurry can be intermittently supplied to a chemical mechanical polishing device. The slurry is generally flushed so that a portion of said slurry is trapped in a plurality of pores of at least one polishing pad associated with said chemical mechanical polishing device, wherein only a minimum amount of said slurry necessary is utilized to perform said chemical mechanical polishing operation, thereby reducing slurry usage and maintaining a consistent level of slurry removal rate performance and a decrease in particle defects thereof. The present invention thus discloses a method and system for intermittently delivering slurry to a chemical mechanical polishing device in a manner that significantly conserves slurry usage.

Abstract translation: 公开了一种利用其至少一个抛光垫在化学机械抛光操作中减少浆料使用的方法和系统。 浆料可以间歇地供应到化学机械抛光装置。 通常将浆料冲洗，使得所述浆料的一部分被捕获在与所述化学机械抛光装置相关联的至少一个抛光垫的多个孔中，其中仅使用最少量的所需浆料来进行所述化学机械抛光 操作，从而减少浆料的使用并保持一致的浆料去除速率性能水平和其颗粒缺陷的减少。 因此，本发明公开了一种用于以显着节省浆料使用的方式间歇地将浆料输送到化学机械抛光装置的方法和系统。

公开(公告)号：US09041140B2

公开(公告)日：2015-05-26

申请号：US13420847

申请日：2012-03-15

Applicant: Shiu-Ko JangJian ,  Min Hao Hong ,  Ting-Chun Wang ,  Chung-Ren Sun

Inventor： Shiu-Ko JangJian ,  Min Hao Hong ,  Ting-Chun Wang ,  Chung-Ren Sun

IPC: H01L31/18 ,  H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14683

Abstract: A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

Abstract translation: 一种器件包括具有正面和背面的半导体衬底，设置在半导体衬底的前侧的光敏器件以及彼此平行的第一和第二栅极线。 第一和第二栅格线位于半导体衬底的背面并覆盖其上。 该装置还包括粘合层，粘合层上的金属氧化物层和金属层上的高折射率层。 粘合层，金属氧化物层和高折射率层基本上是共形的，并且在第一和第二栅格线的顶表面和侧壁上延伸。

公开(公告)号：US20090265484A1

公开(公告)日：2009-10-22

申请号：US12339754

申请日：2008-12-19

Applicant: Cheng-Lung Tsai ,  Ting-Chun Wang ,  Yue-Lang Tang

Inventor： Cheng-Lung Tsai ,  Ting-Chun Wang ,  Yue-Lang Tang

IPC: G06F3/00

CPC classification number: G06F13/385

Abstract: A method for enhancing USB transmission rate is disclosed. The method produces a second packet before receiving a callback signal corresponding to a first packet, thereby reducing the waiting time for receiving the callback signal and thus enhancing USB transmission rate.

Abstract translation: 公开了一种提高USB传输速率的方法。 该方法在接收到与第一分组相对应的回叫信号之前产生第二分组，从而减少用于接收回叫信号的等待时间，从而提高USB传输速率。

公开(公告)号：US06985222B2

公开(公告)日：2006-01-10

申请号：US10423379

申请日：2003-04-25

Applicant: Hsi-Kuei Cheng ,  Chu-Chang Chen ,  Ting-Chun Wang ,  Szu-An Wu ,  Ying-Lang Wang ,  Hsien-Ping Feng

Inventor： Hsi-Kuei Cheng ,  Chu-Chang Chen ,  Ting-Chun Wang ,  Szu-An Wu ,  Ying-Lang Wang ,  Hsien-Ping Feng

IPC: G01N21/88

CPC classification number: G01N21/55 ,  G01N21/8422 ,  G01N2201/0227

Abstract: A system and method for detecting chamber leakage by measuring the reflectivity of an oxidized thin film. In a preferred embodiment, a method of detecting leaks in a chamber includes providing a first monitor workpiece, placing the first monitor workpiece in the chamber, and forming at least one film on the first monitor workpiece. The reflectivity of the least one film of the first monitor workpiece is measured, wherein the reflectivity indicates whether there are leaks in the at least one seal of the chamber. In another embodiment, the method includes providing a second monitor workpiece, placing the second monitor workpiece in the chamber, and forming at least one film on the second monitor workpiece. The reflectivity of the at least one film of the second monitor workpiece is measured, and the second monitor workpiece film reflectivity is compared to the first monitor workpiece film reflectivity.

Abstract translation: 通过测量氧化薄膜的反射率来检测室泄漏的系统和方法。 在优选实施例中，检测腔室泄漏的方法包括提供第一监测工件，将第一监测器工件放置在腔室中，以及在第一监测器工件上形成至少一个膜。 测量第一监视器工件的至少一个膜的反射率，其中反射率指示在室的至少一个密封件中是否有泄漏。 在另一个实施例中，该方法包括提供第二监视器工件，将第二监视器工件放置在腔室中，以及在第二监视器工件上形成至少一个膜。 测量第二监测工件的至少一个膜的反射率，并将第二监测工件膜反射率与第一监测工件膜反射率进行比较。

公开(公告)号：US6146991A

公开(公告)日：2000-11-14

申请号：US389888

申请日：1999-09-03

Applicant: Kuo-Hsien Cheng ,  Ting-Chun Wang

Inventor： Kuo-Hsien Cheng ,  Ting-Chun Wang

IPC: H01L21/768 ,  H01L21/44

CPC classification number: H01L21/76876 ,  H01L21/76843

Abstract: A process for fabricating a tungsten plug, in a deep, small diameter opening, featuring a novel adhesive-barrier composite layer, located along the sides of the deep, small diameter opening, has been developed. The process features the use of a first titanium nitride barrier layer, deposited on an underlying titanium adhesive layer, via chemical vapor deposition procedures, used to enhance the conformality properties of the first titanium nitride barrier layer. A second titanium nitride barrier layer is then deposited, via plasma vapor deposition procedures, protecting the underlying CVD titanium nitride layer from the environment, while providing an improved surface for subsequent nucleation of a CVD tungsten layer.

Abstract translation: 已经开发了一种在深的小直径开口中制造钨插塞的方法，其具有沿着深的小直径开口的侧面定位的新的粘合阻挡复合层。 该方法的特征在于通过化学气相沉积方法使用沉积在下面的钛粘合剂层上的第一氮化钛阻挡层，其用于增强第一氮化钛阻挡层的共形性质。 然后通过等离子体气相沉积方法沉积第二氮化钛阻挡层，保护底层的CVD氮化钛层免受环境的影响，同时为CVD钨层的后续成核提供改进的表面。

公开(公告)号：US08946083B2

公开(公告)日：2015-02-03

申请号：US13167857

申请日：2011-06-24

Applicant: Shiu-Ko JangJian ,  Ting-Chun Wang ,  Szu-An Wu

Inventor： Shiu-Ko JangJian ,  Ting-Chun Wang ,  Szu-An Wu

IPC: H01L21/44 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L23/4827 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/50 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.

Abstract translation: 一种方法包括在电介质层中形成开口，并且在介电层的表面上形成富硅层。 富硅层的一部分延伸到开口中并与电介质层接触。 在富含硅层上方形成含钽层。 进行退火以使含钽层与富硅层反应，从而形成含钽和硅的层。

公开(公告)号：US20130241018A1

公开(公告)日：2013-09-19

申请号：US13420847

申请日：2012-03-15

Applicant: Shiu-Ko JangJian ,  Min Hao Hong ,  Ting-Chun Wang ,  Chung-Ren Sun

Inventor： Shiu-Ko JangJian ,  Min Hao Hong ,  Ting-Chun Wang ,  Chung-Ren Sun

IPC: H01L31/0232 ,  H01L31/18 ,  H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14683

Abstract: A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.