Invention Grant
- Patent Title: Diode-less array for one-time programmable memory
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Application No.: US12346706Application Date: 2008-12-30
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Publication No.: US08593850B2Publication Date: 2013-11-26
- Inventor: Kuan-Fu Chen , Yin-Jen Chen , Tzung-Ting Han , Ming-Shang Chen
- Applicant: Kuan-Fu Chen , Yin-Jen Chen , Tzung-Ting Han , Ming-Shang Chen
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C17/06 ; G11C17/18

Abstract:
A one-time programmable memory array includes a first row conductor extending in a first row direction and disposed at a first elevation, a second row conductor extending in a second row direction and disposed at a second elevation and a column conductor extending in a column direction and disposed adjacent to the first row conductor and adjacent to the second row conductor. The array also includes a dielectric layer covering at least a portion of the column conductor, a fuse link coupled between the dielectric layer on the column conductor and the second row conductor.
Public/Granted literature
- US20090116274A1 DIODE-LESS ARRAY FOR ONE-TIME PROGRAMMABLE MEMORY Public/Granted day:2009-05-07
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