Invention Grant
- Patent Title: Enhanced defect scanning
- Patent Title (中): 增强缺陷扫描
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Application No.: US13286617Application Date: 2011-11-01
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Publication No.: US08605276B2Publication Date: 2013-12-10
- Inventor: Chih-Jen Wu , Chen-Ming Huang , Kuan-Chieh Huang , Chi-Yuan Shih , Chin-Hsiang Lin
- Applicant: Chih-Jen Wu , Chen-Ming Huang , Kuan-Chieh Huang , Chi-Yuan Shih , Chin-Hsiang Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G01N21/00
- IPC: G01N21/00 ; G01N21/95

Abstract:
One of the broader forms of the present disclosure involves a method of enhanced defect inspection. The method includes providing a substrate having defect particles and providing a fluid over the substrate and the defect particles, the fluid having a refractive index greater than air. The method further includes exposing the substrate and the defect particles to incident radiation through the fluid, and detecting, through the fluid, radiation reflected or scattered by the defect particles.
Public/Granted literature
- US20130107248A1 ENHANCED DEFECT SCANNING Public/Granted day:2013-05-02
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