Invention Grant
- Patent Title: Process for forming fins for a FinFET device
- Patent Title (中): 用于形成FinFET器件的鳍的工艺
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Application No.: US12848744Application Date: 2010-08-02
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Publication No.: US08624320B2Publication Date: 2014-01-07
- Inventor: Richard T. Schultz
- Applicant: Richard T. Schultz
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Faegre Baker Daniels LLP
- Main IPC: H01L29/786
- IPC: H01L29/786
Abstract:
An integrated fin-based field effect transistor (FinFET) and method of fabricating such devices on a bulk wafer with EPI-defined fin heights over shallow trench isolation (STI) regions. The FinFET channels overlie the STI regions within the semiconductor bulk, while the fins extend beyond the STI regions into the source and drain regions which are implanted within the semiconductor bulk. With bulk source and drain regions, reduced external FinFET resistance is provided, and with the fins extending into the bulk source and drain regions, improved thermal properties is provided over conventional silicon on insulator (SOI) devices.
Public/Granted literature
- US20120025316A1 Process for Forming FINS for a FinFET Device Public/Granted day:2012-02-02
Information query
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