Invention Grant
- Patent Title: Chips with high fracture toughness through a metal ring
- Patent Title (中): 通过金属环具有高断裂韧性的芯片
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Application No.: US13294226Application Date: 2011-11-11
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Publication No.: US08624348B2Publication Date: 2014-01-07
- Inventor: Ilyas Mohammed
- Applicant: Ilyas Mohammed
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/00

Abstract:
A microelectronic element is disclosed that includes a semiconductor chip and a continuous monolithic metallic edge-reinforcement ring that covers each of the plurality of edge surfaces of the semiconductor chip and extending onto the front surface. The semiconductor chip may have front and rear opposed surfaces and a plurality of contacts at the front surface and edge surfaces extending between the front and rear surfaces. The semiconductor chip may also embody at least an active device or a passive device.
Public/Granted literature
- US20130119520A1 CHIPS WITH HIGH FRACTURE TOUGHNESS THROUGH A METAL RING Public/Granted day:2013-05-16
Information query
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