A sense amplifier for a SRAM device includes a PMOS differential pair and an NMOS differential pair to support operation with bit line precharge voltage as low as a few hundred millivolts without performance degradation, and generates a full rail output signal without any additional level shifter circuits. The PMOS differential amplifier includes tail current device coupled to a voltage higher than the bit line precharge voltage, and the NMOS differential amplifier includes tail current device coupled to a voltage lower than the bit line precharge voltage.