Invention Grant
- Patent Title: Gallium nitride power devices
- Patent Title (中): 氮化镓功率器件
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Application No.: US13723753Application Date: 2012-12-21
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Publication No.: US08633518B2Publication Date: 2014-01-21
- Inventor: Chang Soo Suh , Umesh Mishra
- Applicant: Transphorm Inc.
- Applicant Address: US CA Goleta
- Assignee: Transphorm Inc.
- Current Assignee: Transphorm Inc.
- Current Assignee Address: US CA Goleta
- Agency: Fish & Richardson P.C.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.
Public/Granted literature
- US20130175580A1 GALLIUM NITRIDE POWER DEVICES Public/Granted day:2013-07-11
Information query
IPC分类:
