Invention Grant
- Patent Title: Centralized power gating control for partitioned power gates
- Patent Title (中): 分区电源门的集中电源门控控制
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Application No.: US13293613Application Date: 2011-11-10
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Publication No.: US08633751B2Publication Date: 2014-01-21
- Inventor: Arun B. Hegde
- Applicant: Arun B. Hegde
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Volpe and Koenig, P.C.
- Main IPC: H03K3/02
- IPC: H03K3/02

Abstract:
Power gating control and related circuitry for integrated circuits is described herein. A centralized power gating control circuit uses trigger circuits to control the on/off switching of power gating circuits distributed at different points in a chip, integrated circuit, module or block (collectively “IC”). The power gating circuits may include power gates partitioned for sleep and shutdown modes. The shutdown mode power gates may employ multi-level power gate architecture to minimize inrush current during power-up of the IC. Each level may be associated with or tied to a trigger circuit and activated based on a voltage level reaching the voltage threshold of the trigger circuit. The power gating control and related circuitry may be embedded in the IC.
Public/Granted literature
- US20130120045A1 CENTRALIZED POWER GATING CONTROL FOR PARTITIONED POWER GATES Public/Granted day:2013-05-16
Information query
IPC分类: