Invention Grant
- Patent Title: Defect inspecting method and defect inspecting apparatus
- Patent Title (中): 缺陷检查方法和缺陷检查装置
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Application No.: US13146428Application Date: 2009-12-15
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Publication No.: US08638429B2Publication Date: 2014-01-28
- Inventor: Toshiyuki Nakao , Shigenobu Maruyama , Akira Hamamatsu , Yuta Urano
- Applicant: Toshiyuki Nakao , Shigenobu Maruyama , Akira Hamamatsu , Yuta Urano
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2009-045857 20090227
- International Application: PCT/JP2009/006887 WO 20091215
- International Announcement: WO2010/097878 WO 20100902
- Main IPC: G01N21/00
- IPC: G01N21/00 ; G01J4/00

Abstract:
Provided are a defect inspecting method and a defect inspecting apparatus, wherein defect detecting sensitivity is improved and also haze measurement is performed using polarization detection, while suppressing damages to samples. The defect inspecting apparatus is provided with a light source which oscillates to a sample a laser beam having a wavelength band wherein a small energy is absorbed, and two independent detecting optical systems, i.e., a defect detecting optical system which detects defect scattered light generated by a defect, by radiating the laser beams oscillated by the light source, and a haze detecting optical system which detects roughness scattered light generated due to roughness of the wafer surface. Polarization detection is independently performed with respect to the scattered light detected by the two detecting optical systems, and based on the two different detection signals, defect determination and haze measurement are performed.
Public/Granted literature
- US20120019835A1 DEFECT INSPECTING METHOD AND DEFECT INSPECTING APPARATUS Public/Granted day:2012-01-26
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