Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus for performing a deposition process and calculating a termination time of the deposition process
- Patent Title (中): 基板处理方法和基板处理装置,用于执行沉积处理并计算沉积工艺的终止时间
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Application No.: US12575076Application Date: 2009-10-07
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Publication No.: US08642136B2Publication Date: 2014-02-04
- Inventor: Masato Kushibiki , Eiichi Nishimura , Akitaka Shimizu
- Applicant: Masato Kushibiki , Eiichi Nishimura , Akitaka Shimizu
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2008-261246 20081008
- Main IPC: H05H1/00
- IPC: H05H1/00 ; C23C16/52 ; B05C11/00

Abstract:
A substrate processing method includes performing a deposition process of depositing a thin film on the substrate while depressurizing the inside of the processing chamber and introducing the gas thereinto; and, while the deposition process is being performed, irradiating light, which is transmitted through a monitoring window installed at the processing chamber, toward the inside of the processing chamber through the monitoring window, and monitoring a reflection light intensity of reflection light by receiving the reflection light through the monitoring window. The substrate processing method further includes measuring a temporal variation in the reflection light intensity during the deposition process and calculating a termination time of the deposition process based on a measurement value of the temporal variation; and terminating the deposition process by setting the termination time as an end point of the deposition process.
Public/Granted literature
- US20100086670A1 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM Public/Granted day:2010-04-08
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