Invention Grant
- Patent Title: III-N device structures and methods
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Application No.: US13019733Application Date: 2011-02-02
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Publication No.: US08643062B2Publication Date: 2014-02-04
- Inventor: Primit Parikh , Yuvaraj Dora , Yifeng Wu , Umesh Mishra , Nicholas Fichtenbaum , Rakesh K. Lal
- Applicant: Primit Parikh , Yuvaraj Dora , Yifeng Wu , Umesh Mishra , Nicholas Fichtenbaum , Rakesh K. Lal
- Applicant Address: US CA Goleta
- Assignee: Transphorm Inc.
- Current Assignee: Transphorm Inc.
- Current Assignee Address: US CA Goleta
- Agency: Fish & Richardson P.C.
- Main IPC: H01L29/812
- IPC: H01L29/812 ; H01L31/0256
Abstract:
A III-N device is described with a III-N layer, an electrode thereon, a passivation layer adjacent the III-N layer and electrode, a thick insulating layer adjacent the passivation layer and electrode, a high thermal conductivity carrier capable of transferring substantial heat away from the III-N device, and a bonding layer between the thick insulating layer and the carrier. The bonding layer attaches the thick insulating layer to the carrier. The thick insulating layer can have a precisely controlled thickness and be thermally conductive.
Public/Granted literature
- US20120193677A1 III-N Device Structures and Methods Public/Granted day:2012-08-02
Information query
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