Invention Grant
- Patent Title: Lateral diffusion metal oxide semiconductor transistor structure
- Patent Title (中): 横向扩散金属氧化物半导体晶体管结构
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Application No.: US13585801Application Date: 2012-08-14
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Publication No.: US08643104B1Publication Date: 2014-02-04
- Inventor: Wei-Shan Liao , An-Hung Lin , Hong-Ze Lin , Bo-Jui Huang
- Applicant: Wei-Shan Liao , An-Hung Lin , Hong-Ze Lin , Bo-Jui Huang
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agent Ding Yu Tan
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L29/02 ; H01L27/146 ; H01L29/861
Abstract:
A lateral diffusion metal-oxide-semiconductor (LDMOS) transistor structure comprises a barrier layer, a semiconductor layer, a source, a first drain and a guard ring. The barrier layer with a first polarity is disposed in a substrate. The semiconductor layer with a second polarity is disposed on the barrier layer. The source has a first polarity region and a second polarity region both formed in the semiconductor layer. The first drain is disposed in the semiconductor layer and has a drift region with the second polarity. The guard ring with the first polarity extends downward from a surface of the semiconductor layer in a manner of getting in touch with the barrier layer and to surround the source and the drain, and is electrically connected to the source.
Public/Granted literature
- US20140048877A1 LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR TRANSISTOR STRUCTURE Public/Granted day:2014-02-20
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