Invention Grant
- Patent Title: Method of forming opening on semiconductor substrate
- Patent Title (中): 在半导体衬底上形成开口的方法
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Application No.: US13087379Application Date: 2011-04-15
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Publication No.: US08647989B2Publication Date: 2014-02-11
- Inventor: Chun-Yuan Wu , Chih-Chien Liu , Chin-Fu Lin , Po-Chun Chen
- Applicant: Chun-Yuan Wu , Chih-Chien Liu , Chin-Fu Lin , Po-Chun Chen
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/311
- IPC: H01L21/311
Abstract:
The present invention provides a method of forming an opening on a semiconductor substrate. First, a substrate is provided. Then a dielectric layer and a cap layer are formed on the substrate. A ratio of a thickness of the dielectric layer and a thickness of the cap layer is substantially between 15 and 1.5. Next, a patterned boron nitride layer is formed on the cap layer. Lastly, an etching process is performed by using the patterned hard mask as a mask to etch the cap layer and the dielectric layer so as to form an opening in the cap layer and the dielectric layer.
Public/Granted literature
- US20120264306A1 Method of Forming Opening on Semiconductor Substrate Public/Granted day:2012-10-18
Information query
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