Invention Grant
- Patent Title: Method for fabrication of layered heterojunction polymeric devices
- Patent Title (中): 层状异质结聚合物器件的制造方法
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Application No.: US13254847Application Date: 2010-03-03
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Publication No.: US08648336B2Publication Date: 2014-02-11
- Inventor: Leo W. M. Lau , Tomas Trebicky , Heng Yong Nie
- Applicant: Leo W. M. Lau , Tomas Trebicky , Heng Yong Nie
- Applicant Address: CA London
- Assignee: The University of Western Ontario
- Current Assignee: The University of Western Ontario
- Current Assignee Address: CA London
- Agency: Hill & Schumacher
- Agent Lynn C. Schumacher
- International Application: PCT/CA2010/000300 WO 20100303
- International Announcement: WO2010/099609 WO 20100910
- Main IPC: H01L35/24
- IPC: H01L35/24
Abstract:
Method for growing multilayer polymer based hetexjunction devices which uses selective breaking of C—H or Si—H bonds without breaking other bonds leading to fast curing for the production of layered polymer devices having polymer heterojunctions deposited by the common solution-based deposition methods.
Public/Granted literature
- US20120056167A1 METHOD FOR FABRICATION OF LAYERED HETEROJUNCTION POLYMERIC DEVICES Public/Granted day:2012-03-08
Information query
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