公开(公告)号：US20120061558A1

公开(公告)日：2012-03-15

申请号：US13255038

申请日：2010-03-03

Applicant: Leo W.M. Lau ,  De-Quan Yang ,  Tomas Trebicky ,  Heng Yong Nie

Inventor： Leo W.M. Lau ,  De-Quan Yang ,  Tomas Trebicky ,  Heng Yong Nie

IPC: H05H3/02

CPC classification number: H05H3/02 ,  B05D3/007 ,  B05D3/068 ,  B05D3/145 ,  C01B3/00 ,  C01B3/02 ,  Y02E60/324

Abstract: A method for producing hyperthermal molecular hydrogen is disclosed and use of same for selectively breaking C—H or Si—H bonds without breaking other bonds are disclosed. A hydrogen plasma is maintained and protons are extracted with an electric field to accelerate them to an appropriate kinetic energy. The protons enter into a drift zone to collide with molecular hydrogen in gas phase. The cascades of collisions produce a high flux of hyperthermal molecular hydrogen with a flux many times larger than the flux of protons extracted from the hydrogen plasma. The nominal flux ratio of hyperthermal molecular hydrogen to proton is controlled by the hydrogen pressure in the drift zone, and by the length of the drift zone. The extraction energy of the protons is shared by these hyperthermal molecules so that average energy of the hyperthermal molecular hydrogen is controlled by extraction energy of the protons and the nominal flux ratio. Since the hyperthermal molecular hydrogen projectiles do not carry any electrical charge, the flux of hyperthermal hydrogen can be used to engineer surface modification of both electrical insulating products and conductive products. When this method of generating a high flux of hyperthermal molecular hydrogen is applied to bombard organic precursor molecules (or silicone, or silane molecules) with desirable chemical functionality/functionalities on a substrate, the C—H or Si—H bonds are thus cleaved preferentially due to the kinematic selectivity of energy deposition from the hyperthermal hydrogen projectiles to the hydrogen atoms in the precursor molecules. The induced cross-linking reactions produce a stable molecular layer having a controllable degree of cross-linking and retaining the desirable chemical functionality/functionalities of the precursor molecules.

Abstract translation: 公开了一种制备超热分子氢的方法，并公开了其用于选择性地破坏C-H或Si-H键而不破坏其它键的用途。 维持氢等离子体并用电场提取质子，以将其加速至适当的动能。 质子进入漂移区，与气相中的分子氢碰撞。 级联的碰撞产生高通量的超热分子氢，其通量比从氢等离子体提取的质子通量多大许多倍。 超热分子氢与质子的标称通量比由漂移区中的氢气压力和漂移区的长度来控制。 质子的提取能量由这些超热分子共享，使得超热分子氢的平均能量由质子的提取能量和标称通量比控制。 由于超热分子氢射弹不携带任何电荷，所以超热氢气流可用于工程电绝缘产品和导电产品的表面改性。 当产生高通量的超热分子氢的方法用于轰击在底物上具有理想的化学官能度/功能性的有机前体分子（或硅氧烷或硅烷分子）时，C-H或Si-H键优先被切割 这是由于从超热氢弹体到前体分子中的氢原子的能量沉积的运动选择性。 诱导的交联反应产生具有可控程度的交联并保持前体分子所需的化学官能度/功能的稳定的分子层。

公开(公告)号：US09113544B2

公开(公告)日：2015-08-18

申请号：US13255038

申请日：2010-03-03

Applicant: Leo W. M. Lau ,  De-Quan Yang ,  Tomas Trebicky ,  Heng Yong Nie

Inventor： Leo W. M. Lau ,  De-Quan Yang ,  Tomas Trebicky ,  Heng Yong Nie

IPC: H05H3/02 ,  B05D3/00 ,  B05D3/14 ,  C01B3/00 ,  C01B3/02 ,  B05D3/06

CPC classification number: H05H3/02 ,  B05D3/007 ,  B05D3/068 ,  B05D3/145 ,  C01B3/00 ,  C01B3/02 ,  Y02E60/324

Abstract: A method for producing hyperthermal molecular hydrogen is disclosed and use of same for selectively breaking C—H or Si—H bonds without breaking other bonds are disclosed. A hydrogen plasma is maintained and protons are extracted with an electric field to accelerate them to an appropriate kinetic energy. The protons enter into a drift zone to collide with molecular hydrogen in gas phase. The cascades of collisions produce a high flux of hyperthermal molecular hydrogen with a flux many times larger than the flux of protons extracted from the hydrogen plasma. The nominal flux ratio of hyperthermal molecular hydrogen to proton is controlled by the hydrogen pressure in the drift zone, and by the length of the drift zone. The extraction energy of the protons is shared by these hyperthermal molecules so that average energy of the hyperthermal molecular hydrogen is controlled by extraction energy of the protons and the nominal flux ratio. Since the hyperthermal molecular hydrogen projectiles do not carry any electrical charge, the flux of hyperthermal hydrogen can be used to engineer surface modification of both electrical insulating products and conductive products. When this method of generating a high flux of hyperthermal molecular hydrogen is applied to bombard organic precursor molecules (or silicone, or silane molecules) with desirable chemical functionality/functionalities on a substrate, the C—H or Si—H bonds are thus cleaved preferentially due to the kinematic selectivity of energy deposition from the hyperthermal hydrogen projectiles to the hydrogen atoms in the precursor molecules. The induced cross-linking reactions produce a stable molecular layer having a controllable degree of cross-linking and retaining the desirable chemical functionality/functionalities of the precursor molecules.

公开(公告)号：US08648336B2

公开(公告)日：2014-02-11

申请号：US13254847

申请日：2010-03-03

Applicant: Leo W. M. Lau ,  Tomas Trebicky ,  Heng Yong Nie

Inventor： Leo W. M. Lau ,  Tomas Trebicky ,  Heng Yong Nie

IPC: H01L35/24

CPC classification number: C08J7/123 ,  B29C64/124 ,  C08J7/04 ,  C08J2443/04

Abstract: Method for growing multilayer polymer based hetexjunction devices which uses selective breaking of C—H or Si—H bonds without breaking other bonds leading to fast curing for the production of layered polymer devices having polymer heterojunctions deposited by the common solution-based deposition methods.

Abstract translation: 用于生长多层聚合物基离合器件的方法，其使用选择性断裂C-H或Si-H键，而不破坏其它键，导致快速固化，以生产具有通过基于溶液的沉积方法沉积的聚合物异质结的层状聚合物器件。

公开(公告)号：US20120056167A1

公开(公告)日：2012-03-08

申请号：US13254847

申请日：2010-03-03

Applicant: Leo W.M. Lau ,  Tomas Trebicky ,  Heng Yong Nie

Inventor： Leo W.M. Lau ,  Tomas Trebicky ,  Heng Yong Nie

IPC: H01L51/40 ,  H01L51/30

CPC classification number: C08J7/123 ,  B29C64/124 ,  C08J7/04 ,  C08J2443/04

Abstract: Method for growing multilayer polymer based heterojunction devices which uses selective breaking of C—H or Si—H bonds without breaking other bonds leading to fast curing for the production of layered polymer devices having polymer heterojunctions deposited by the common solution-based deposition methods. In one embodiment, a hydrogen plasma is maintained and protons are extracted with an electric field to accelerate them to an appropriate kinetic energy. The protons enter into a drift zone to collide with molecular hydrogen in gas phase. The cascades of collisions produce a high flux of hyperthermal molecular hydrogen with a flux many times of the flux of protons extracted from the hydrogen plasma. The nominal flux ratio of hyperthermal molecular hydrogen to proton is easily controllable by the hydrogen pressure in the drift zone, and by the length of the drift zone. The extraction energy of the protons is shared by these hyperthermal molecules so that average energy of the hyperthermal molecular hydrogen is easily controlled by extraction energy of the protons and the nominal flux ratio. Since unlike protons the hyperthermal molecular hydrogen projectiles do not carry any electrical charge, the high flux of hyperthermal molecular hydrogen can be used to engineer surface modification of both electrical insulating products and conductive products. In a typical embodiment, organic precursor molecules (or silicone, or silane molecules) with desirable chemical functionality or a set of functionalities and with desirable electrical properties are condensed on a substrate with a solution-based deposition method. The molecular layer is bombarded by the high flux of hyperthermal molecular hydrogen derived from a hydrogen plasma. The C—H or Si—H bonds are thus cleaved preferentially due to the kinematic selectivity of energy deposition from the hyperthermal hydrogen projectiles to the hydrogen atoms in the precursor molecules. The induced cross-linking reactions produce a stable molecular layer retaining the desirable chemical functionality/functionalities and electrical properties carried to the substrate by the precursor molecules. The molecular layer is thus cured and ready for additional molecular layer formation for the production of polymer devices which typically comprise one or more than one polymer heterojunction.