Invention Grant
US08652940B2 Wafer dicing used hybrid multi-step laser scribing process with plasma etch
有权
晶圆切割使用等离子体蚀刻的混合多步激光划线工艺
- Patent Title: Wafer dicing used hybrid multi-step laser scribing process with plasma etch
- Patent Title (中): 晶圆切割使用等离子体蚀刻的混合多步激光划线工艺
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Application No.: US13851442Application Date: 2013-03-27
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Publication No.: US08652940B2Publication Date: 2014-02-18
- Inventor: Wei-Sheng Lei , Brad Eaton , Madhava Rao Yalamanchili , Saravjeet Singh , Ajay Kumar
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a multi-step laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.
Public/Granted literature
- US20130267076A1 WAFER DICING USING HYBRID MULTI-STEP LASER SCRIBING PROCESS WITH PLASMA ETCH Public/Granted day:2013-10-10
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