Semiconductor barrier layer constructions, and methods of forming semiconductor barrier layer constructions

Invention Grant

US08659064B2 Semiconductor barrier layer constructions, and methods of forming semiconductor barrier layer constructions 有权

Title translation: 半导体阻挡层结构以及形成半导体阻挡层结构的方法

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Patent Title: Semiconductor barrier layer constructions, and methods of forming semiconductor barrier layer constructions
Patent Title (中): 半导体阻挡层结构以及形成半导体阻挡层结构的方法
Application No.: US13185872

Application Date: 2011-07-19
Publication No.: US08659064B2

Publication Date: 2014-02-25
Inventor: Yongjun Jeff Hu
Applicant: Yongjun Jeff Hu
Applicant Address: US ID Boise
Assignee: Micron Technology, Inc.
Current Assignee: Micron Technology, Inc.
Current Assignee Address: US ID Boise
Agency: Wells St. John P.S.
Main IPC: H01L29/94
IPC: H01L29/94

Semiconductor barrier layer constructions, and methods of forming semiconductor barrier layer constructions

Abstract:

The invention includes methods of utilizing compositions containing iridium and tantalum in semiconductor constructions, and includes semiconductor constructions comprising compositions containing iridium and tantalum. The compositions containing iridium and tantalum can be utilized as barrier materials, and in some aspects can be utilized as barriers to copper diffusion.

Abstract(Chinese):

本发明包括在半导体结构中使用含有铱和钽的组合物的方法，并且包括包含含有铱和钽的组合物的半导体构造。含有铱和钽的组合物可用作阻挡材料，并且在一些方面可用作铜扩散的阻挡层。

Public/Granted literature

US20120012914A1 Semiconductor Constructions, and Methods of Forming Semiconductor Constructions Public/Granted day:2012-01-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/86	..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/92	...有电位跃变势垒或表面势垒的电容器
H01L29/94	....金属—绝缘体—半导体，例如MOS