Invention Grant
- Patent Title: Method for making a thin-film element
- Patent Title (中): 制造薄膜元件的方法
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Application No.: US12088047Application Date: 2006-09-25
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Publication No.: US08664084B2Publication Date: 2014-03-04
- Inventor: Chrystel Deguet , Laurent Clavelier
- Applicant: Chrystel Deguet , Laurent Clavelier
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Brinks Hofer Gilson & Lione
- Priority: FR0509897 20050928
- International Application: PCT/FR2006/002184 WO 20060925
- International Announcement: WO2007/036631 WO 20070405
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/46
Abstract:
A method for making a thin-film element includes epitaxially growing a first crystalline layer on a second crystalline layer of a support where the second crystalline layer is a material different from the first crystalline layer, the first crystalline layer having a thickness less than a critical thickness. A dielectric layer is formed on a side of the first crystalline layer opposite to the support to form a donor structure. The donor structure is assembled with a receiver layer and the support is removed.
Public/Granted literature
- US20080254591A1 Method for Making a Thin-Film Element Public/Granted day:2008-10-16
Information query
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