Invention Grant
US08666140B2 Defect inspection method for wafer and wafer defect inspection system using the same 有权
使用该晶圆和晶圆缺陷检查系统的缺陷检查方法

  • Patent Title: Defect inspection method for wafer and wafer defect inspection system using the same
  • Patent Title (中): 使用该晶圆和晶圆缺陷检查系统的缺陷检查方法
  • Application No.: US13352432
    Application Date: 2012-01-18
  • Publication No.: US08666140B2
    Publication Date: 2014-03-04
  • Inventor: Kai-Ping Huang
  • Applicant: Kai-Ping Huang
  • Applicant Address: TW Hsinchu
  • Assignee: United Microelectronics Corp.
  • Current Assignee: United Microelectronics Corp.
  • Current Assignee Address: TW Hsinchu
  • Agent Ding Yu Tan
  • Main IPC: G06K9/00
  • IPC: G06K9/00
Defect inspection method for wafer and wafer defect inspection system using the same
Abstract:
A defect inspection method for a wafer is provided. The wafer comprises a component pattern. The method comprises the following steps: providing a defect inspection apparatus for inspecting the defects on the wafer to obtain a defect distribution map; providing a photo mask, wherein the photo mask comprises a exposure pattern corresponding to the component pattern; and comparing the defect distribution map with the exposure pattern and dividing the defects in the defect distribution map into a first killer defect group and a first non-killer defect group according to their corresponding locations in the exposure pattern. In addition, a wafer defect inspection system applying the same method is also provided.
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