Invention Grant
US08674489B2 Interconnect structure with cavity having one or several contact rises on the wall of the cavity and method for producing same
有权
具有一个或多个接触的空腔的互连结构在腔的壁上上升，并且用于制造其的方法
- Patent Title: Interconnect structure with cavity having one or several contact rises on the wall of the cavity and method for producing same
- Patent Title (中): 具有一个或多个接触的空腔的互连结构在腔的壁上上升，并且用于制造其的方法
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Application No.: US12912203Application Date: 2010-10-26
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Publication No.: US08674489B2Publication Date: 2014-03-18
- Inventor: Sebastien Bolis , Fabrice Jacquet , Damien Saint-Patrice
- Applicant: Sebastien Bolis , Fabrice Jacquet , Damien Saint-Patrice
- Applicant Address: FR Paris
- Assignee: Commissariat a l'energie atomique et aux energies alternatives
- Current Assignee: Commissariat a l'energie atomique et aux energies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0957588 20091028
- Main IPC: H01L23/02
- IPC: H01L23/02
Abstract:
An interconnect device is disclosed including a support in which at least one hole is formed, the hole having walls forming a closed contour and being formed by a cavity and one or several slots communicating with the cavity. The slots extend in a direction making a non-zero angle with the main plane of the support. Several conducting elements are positioned on at least one wall of the hole and pass through the hole. The conducting elements are each intended to connect conducting areas to each other that are situated on either side of the support. At least one of the slots separates two of the conducting elements from each other.
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