Invention Grant
- Patent Title: Through silicon imaging and probing
- Patent Title (中): 通过硅成像和探测
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Application No.: US13074877Application Date: 2011-03-29
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Publication No.: US08687192B2Publication Date: 2014-04-01
- Inventor: Baohua Niu , Patrick M. Pardy , David L. Budka , Mitchell L. Sacks
- Applicant: Baohua Niu , Patrick M. Pardy , David L. Budka , Mitchell L. Sacks
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: G01J4/00
- IPC: G01J4/00

Abstract:
Through silicon imaging and probing. A light source provides unpolarized light to be projected on a device under test (DUT). Light reflected from the DUT may be captured by a camera or other image capture device. A pellicle is utilized to reflect light from the light source toward the DUT. The pellicle also passes light reflected by the DUT to the camera. One or more linear polarizers or half wave plates may be used to provide the desired light polarization. The ability to provide the desired polarization provides an improved image that can be captured by the camera.
Public/Granted literature
- US20120249859A1 THROUGH SILICON IMAGING AND PROBING Public/Granted day:2012-10-04
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