Invention Grant
- Patent Title: Semiconductor devices with field plates
- Patent Title (中): 具有现场板的半导体器件
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Application No.: US13748907Application Date: 2013-01-24
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Publication No.: US08692294B2Publication Date: 2014-04-08
- Inventor: Rongming Chu , Robert Coffie
- Applicant: Transphorm Inc.
- Applicant Address: US CA Goleta
- Assignee: Transphorm Inc.
- Current Assignee: Transphorm Inc.
- Current Assignee Address: US CA Goleta
- Agency: Fish & Richardson P.C.
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/47 ; H01L29/778 ; H01L21/765 ; H01L21/335
Abstract:
A III-N device is described with a III-N material layer, an insulator layer on a surface of the III-N material layer, an etch stop layer on an opposite side of the insulator layer from the III-N material layer, and an electrode defining layer on an opposite side of the etch stop layer from the insulator layer. A recess is formed in the electrode defining layer. An electrode is formed in the recess. The insulator can have a precisely controlled thickness, particularly between the electrode and III-N material layer.
Public/Granted literature
- US20130200435A1 SEMICONDUCTOR DEVICES WITH FIELD PLATES Public/Granted day:2013-08-08
Information query
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