Invention Grant
- Patent Title: Through silicon via structure having protection ring
- Patent Title (中): 通过具有保护环的硅通孔结构
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Application No.: US13309559Application Date: 2011-12-02
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Publication No.: US08692359B2Publication Date: 2014-04-08
- Inventor: Yung-Chang Lin , Chien-Li Kuo , Ming-Tse Lin , Sun-Chieh Chien
- Applicant: Yung-Chang Lin , Chien-Li Kuo , Ming-Tse Lin , Sun-Chieh Chien
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/40
- IPC: H01L29/40
Abstract:
A method of fabricating a semiconductor device includes the following steps. A semiconductor substrate having a first side and a second side facing to the first side is provided. At least an opening is disposed in the semiconductor substrate of a protection region defined in the first side. A first material layer is formed on the first side and the second side, and the first material layer partially fills the opening. Subsequently, a part of the first material layer on the first side and outside the protection region is removed. A second material layer is formed on the first side and the second side, and the second material layer fills the opening. Then, a part of the second material layer on the first side and outside the protection region is removed. Finally, the remaining first material layer and the remaining second material layer on the first side are planarized.
Public/Granted literature
- US20130140708A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2013-06-06
Information query
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