Invention Grant
- Patent Title: Method of forming a metal pattern
- Patent Title (中): 形成金属图案的方法
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Application No.: US12470887Application Date: 2009-05-22
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Publication No.: US08697196B2Publication Date: 2014-04-15
- Inventor: Kuan-Jiuh Lin , Chuen-Yuan Hsu
- Applicant: Kuan-Jiuh Lin , Chuen-Yuan Hsu
- Applicant Address: TW Taichung
- Assignee: Kuan-Jiuh Lin
- Current Assignee: Kuan-Jiuh Lin
- Current Assignee Address: TW Taichung
- Agency: Osha Liang LLP
- Priority: TW98104955A 20090217
- Main IPC: B05D3/02
- IPC: B05D3/02 ; H05H1/00 ; H05H1/30 ; H05H1/46 ; H05H1/24

Abstract:
A method of forming a metal pattern comprises: (a) providing a substrate; (b) depositing at least one patterned metal layer which includes a metal selected from an inert metal, an inert metal alloy, and combinations thereof; (c) disposing the substrate and the patterned metal layer in a vacuum chamber, vacuuming the vacuum chamber, and introducing a gas into the vacuum chamber; and (d) applying microwave energy to the gas to produce a microwave plasma of the gas within the vacuum chamber so that the patterned metal layer is acted by the microwave plasma and formed into a plurality of spaced apart metal nanoparticles on the substrate.
Public/Granted literature
- US20100209617A1 METHOD OF FORMING A METAL PATTERN Public/Granted day:2010-08-19
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