Invention Grant
- Patent Title: FinFET structure
- Patent Title (中): FinFET结构
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Application No.: US13347707Application Date: 2012-01-11
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Publication No.: US08698199B2Publication Date: 2014-04-15
- Inventor: Tong-Yu Chen , Chih-Jung Wang
- Applicant: Tong-Yu Chen , Chih-Jung Wang
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A finFET device includes a substrate, at least a first fin structure disposed on the substrate, a L-shaped insulator surrounding the first fin structure and exposing, at least partially, the sidewalls of the first fin structure, wherein the height of the L-shaped insulator is inferior to the height of the first fin structure in order to expose parts of the sidewalls surface of the first fin structure, and a gate structure disposed partially on the L-shaped insulator and partially on the first fin structure.
Public/Granted literature
- US20130175621A1 FINFET STRUCTURE AND METHOD FOR MAKING THE SAME Public/Granted day:2013-07-11
Information query
IPC分类:
