Invention Grant
- Patent Title: Method of optical proximity correction in combination with double patterning technique
- Patent Title (中): 光学邻近校正方法结合双重图案化技术
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Application No.: US13748564Application Date: 2013-01-23
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Publication No.: US08701052B1Publication Date: 2014-04-15
- Inventor: Hui-Fang Kuo , Ming-Jui Chen , Cheng-Te Wang
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method of optical proximity correction (OPC) includes the following steps. A layout pattern is provided to a computer system, and the layout pattern is classified into at least a first sub-layout pattern and at least a second sub-layout pattern. Then, at least an OPC calculation is performed respectively on the first sub-layout pattern and the second sub-layout pattern to form a corrected first sub-layout pattern and a corrected second sub-layout pattern. The corrected first sub-layout pattern/the corrected second sub-layout pattern and the layout pattern are compared to select a part of the corrected first sub-layout pattern/the corrected second sub-layout pattern as a first selected pattern/the second selected pattern, and the first selected pattern/the second selected pattern is further altered to modify the corrected first sub-layout pattern/the corrected second sub-layout pattern as a third sub-layout pattern/a fourth sub-layout pattern.
Information query