Invention Grant
- Patent Title: Embedded capacitive stack
- Patent Title (中): 嵌入式电容堆栈
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Application No.: US12045656Application Date: 2008-03-10
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Publication No.: US08713769B2Publication Date: 2014-05-06
- Inventor: George Dudnikov
- Applicant: George Dudnikov
- Applicant Address: US CA San Jose
- Assignee: Sanmina-Sci Corporation
- Current Assignee: Sanmina-Sci Corporation
- Current Assignee Address: US CA San Jose
- Agency: Loza & Loza, LLP
- Agent Julio M. Loza
- Main IPC: H01G7/00
- IPC: H01G7/00

Abstract:
A novel method for manufacturing embedded a capacitive stack and a novel capacitive stack apparatus are provided having a capacitive core that serves as a structural substrate on which alternating thin conductive foils and nanopowder-loaded dielectric layers may be added and tested for reliability. This layering and testing allows early fault detection of the thin dielectric layers of the capacitive stack. The capacitive stack may be configured to supply multiple isolated capacitive elements that provide segregated, device-specific decoupling capacitance to one or more electrical components. The capacitive stack may serve as a core substrate on which a plurality of additional signaling layers of a multilayer circuit board may be coupled.
Public/Granted literature
- US20080216298A1 EMBEDDED CAPACITIVE STACK Public/Granted day:2008-09-11
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