Invention Grant
- Patent Title: FinFET device fabrication using thermal implantation
- Patent Title (中): 使用热注入的FinFET器件制造
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Application No.: US13426785Application Date: 2012-03-22
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Publication No.: US08722431B2Publication Date: 2014-05-13
- Inventor: Nilay Anil Pradhan , Stanislav S. Todorov , Kurt Decker-Lucke , Klaus Petry , Benjamin Colombeau , Baonian Guo
- Applicant: Nilay Anil Pradhan , Stanislav S. Todorov , Kurt Decker-Lucke , Klaus Petry , Benjamin Colombeau , Baonian Guo
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of forming a FinFET device. The method may include providing a substrate having a single crystalline region, heating the substrate to a substrate temperature effective for dynamically removing implant damage during ion implantation, implanting ions into the substrate while the substrate is maintained at the substrate temperature, and patterning the single crystalline region so as to form a single crystalline fin.
Public/Granted literature
- US20130252349A1 Finfet Device Fabrication Using Thermal Implantation Public/Granted day:2013-09-26
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