Invention Grant
- Patent Title: Method for fabricating a field effect device with weak junction capacitance
- Patent Title (中): 具有弱结电容的场效应器件的制造方法
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Application No.: US13357061Application Date: 2012-01-24
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Publication No.: US08722499B2Publication Date: 2014-05-13
- Inventor: Maud Vinet , Laurent Grenouillet , Yannick Le Tiec , Nicolas Posseme
- Applicant: Maud Vinet , Laurent Grenouillet , Yannick Le Tiec , Nicolas Posseme
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oliff PLC
- Priority: FR1100201 20110124
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
The field effect device is formed on a substrate of semiconductor on insulator type provided with a support substrate separated from a semiconductor film by an electrically insulating layer. The source and drain electrodes are formed in the semiconductor film on each side of the gate electrode. The electrically insulating layer comprises a first area having a first electric capacitance value between the semiconductor film and the support substrate facing the gate electrode. The electrically insulating layer comprises second and third areas having a higher electric capacitance value than the first value between the semiconductor film and the support substrate facing the source and drain electrodes.
Public/Granted literature
- US20120190214A1 METHOD FOR FABRICATING A FIELD EFFECT DEVICE WITH WEAK JUNCTION CAPACITANCE Public/Granted day:2012-07-26
Information query
IPC分类:
