公开(公告)号：US20120187489A1

公开(公告)日：2012-07-26

申请号：US13356975

申请日：2012-01-24

Applicant: Laurent GRENOUILLET ,  Yannick LE TIEC ,  Nicolas POSSEME ,  Maud VINET

Inventor： Laurent GRENOUILLET ,  Yannick LE TIEC ,  Nicolas POSSEME ,  Maud VINET

IPC: H01L29/772 ,  H01L21/336

CPC classification number: H01L29/78618 ,  H01L21/26586 ,  H01L29/66772 ,  H01L29/78696

Abstract: The field effect device comprises a sacrificial gate electrode having side walls covered by lateral spacers formed on a semiconductor material film. The source/drain electrodes are formed in the semiconductor material film and are arranged on each side of the gate electrode. A diffusion barrier element is implanted through the void left by the sacrificial gate so as to form a modified diffusion area underneath the lateral spacers. The modified diffusion area is an area where the mobility of the doping impurities is reduced compared with the source/drain electrodes.

Abstract translation: 场效应器件包括牺牲栅极电极，其侧壁由形成在半导体材料膜上的横向间隔件覆盖。 源极/漏极形成在半导体材料膜中并且布置在栅电极的每一侧上。 扩散阻挡元件通过由牺牲栅极留下的空隙注入，以便在侧向间隔物下方形成修改的扩散区域。 改性扩散区域是与源/漏电极相比掺杂杂质的迁移率降低的区域。

公开(公告)号：US08603872B2

公开(公告)日：2013-12-10

申请号：US13356975

申请日：2012-01-24

Applicant: Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Posseme ,  Maud Vinet

Inventor： Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Posseme ,  Maud Vinet

IPC: H01L21/336

CPC classification number: H01L29/78618 ,  H01L21/26586 ,  H01L29/66772 ,  H01L29/78696

Abstract: The field effect device comprises a sacrificial gate electrode having side walls covered by lateral spacers formed on a semiconductor material film. The source/drain electrodes are formed in the semiconductor material film and are arranged on each side of the gate electrode. A diffusion barrier element is implanted through the void left by the sacrificial gate so as to form a modified diffusion area underneath the lateral spacers. The modified diffusion area is an area where the mobility of the doping impurities is reduced compared with the source/drain electrodes.

Abstract translation: 场效应器件包括牺牲栅极电极，其侧壁由形成在半导体材料膜上的横向间隔件覆盖。 源极/漏极形成在半导体材料膜中并且布置在栅电极的每一侧上。 扩散阻挡元件通过由牺牲栅极留下的空隙注入，以便在侧向间隔物下方形成修改的扩散区域。 改性扩散区域是与源/漏电极相比掺杂杂质的迁移率降低的区域。

公开(公告)号：US20120190214A1

公开(公告)日：2012-07-26

申请号：US13357061

申请日：2012-01-24

Applicant: Maud Vinet ,  Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Posseme

Inventor： Maud Vinet ,  Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Posseme

IPC: H01L21/31

CPC classification number: H01L29/78603 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78648

Abstract: The field effect device is formed on a substrate of semiconductor on insulator type provided with a support substrate separated from a semiconductor film by an electrically insulating layer. The source and drain electrodes are formed in the semiconductor film on each side of the gate electrode. The electrically insulating layer comprises a first area having a first electric capacitance value between the semiconductor film and the support substrate facing the gate electrode. The electrically insulating layer comprises second and third areas having a higher electric capacitance value than the first value between the semiconductor film and the support substrate facing the source and drain electrodes.

Abstract translation: 场效应器件形成在具有通过电绝缘层与半导体膜分离的支撑衬底的绝缘体半导体衬底上。 源极和漏极形成在栅电极的每一侧的半导体膜中。 电绝缘层包括在半导体膜和支撑衬底之间具有面向栅电极的第一电容值的第一区域。 电绝缘层包括具有比半导体膜和支撑衬底面对源电极和漏电极的第一值更高的电容值的第二和第三区域。

公开(公告)号：US08994142B2

公开(公告)日：2015-03-31

申请号：US13439356

申请日：2012-04-04

Applicant: Maud Vinet ,  Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Posseme

Inventor： Maud Vinet ,  Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Posseme

IPC: H01L21/70 ,  H01L27/12 ,  H01L21/44 ,  H01L29/786 ,  H01L21/74 ,  H01L21/762

CPC classification number: H01L29/78648 ,  H01L21/743 ,  H01L21/76283

Abstract: The field effect transistor comprises a substrate successively comprising an electrically conducting support substrate, an electrically insulating layer and a semiconductor material layer. The counter-electrode is formed in a first portion of the support substrate facing the semi-conductor material layer. The insulating pattern surrounds the semi-conductor material layer to delineate a first active area and it penetrates partially into the support layer to delineate the first portion. An electrically conducting contact passes through the insulating pattern from a first lateral surface in contact with the counter-electrode through to a second surface. The contact is electrically connected to the counter-electrode.

Abstract translation: 场效应晶体管包括依次包括导电支撑衬底，电绝缘层和半导体材料层的衬底。 对置电极形成在支撑基板的面向半导体材料层的第一部分中。 绝缘图案围绕半导体材料层以描绘第一有源区域并且其部分地穿透到支撑层中以描绘第一部分。 导电接触通过绝缘图案从与对电极接触的第一侧表面穿过第二表面。 触点电连接到对电极。

公开(公告)号：US09070709B2

公开(公告)日：2015-06-30

申请号：US14119395

申请日：2011-06-09

Applicant: Nicolas Posseme ,  Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Loubet ,  Maud Vinet

Inventor： Nicolas Posseme ,  Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Loubet ,  Maud Vinet

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/84 ,  H01L21/265

CPC classification number: H01L29/66477 ,  H01L21/2652 ,  H01L21/26586 ,  H01L21/823418 ,  H01L21/84 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66772

Abstract: The substrate successively includes a support substrate, an electrically insulating layer, a semiconductor material layer, and a gate pattern. The semiconductor material layer and gate pattern are covered by a covering layer. A first doping impurity is implanted in the semiconductor material layer through the covering layer so as to place the thickness of maximum concentration of the first doping impurity in the first layer. The covering layer is partly eliminated so as to form lateral spacers leaving source/drain electrodes free.

Abstract translation: 基板依次包括支撑基板，电绝缘层，半导体材料层和栅极图案。 半导体材料层和栅极图案被覆盖层覆盖。 第一掺杂杂质通过覆盖层注入到半导体材料层中，以将第一掺杂杂质的最大浓度的厚度置于第一层中。 覆盖层被部分地消除，以形成离开源极/漏电极的横向间隔物。

公开(公告)号：US08722499B2

公开(公告)日：2014-05-13

申请号：US13357061

申请日：2012-01-24

Applicant: Maud Vinet ,  Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Posseme

Inventor： Maud Vinet ,  Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Posseme

IPC: H01L21/336

CPC classification number: H01L29/78603 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78648

Abstract: The field effect device is formed on a substrate of semiconductor on insulator type provided with a support substrate separated from a semiconductor film by an electrically insulating layer. The source and drain electrodes are formed in the semiconductor film on each side of the gate electrode. The electrically insulating layer comprises a first area having a first electric capacitance value between the semiconductor film and the support substrate facing the gate electrode. The electrically insulating layer comprises second and third areas having a higher electric capacitance value than the first value between the semiconductor film and the support substrate facing the source and drain electrodes.

Abstract translation: 场效应器件形成在具有通过电绝缘层与半导体膜分离的支撑衬底的绝缘体半导体衬底上。 源极和漏极形成在栅电极的每一侧的半导体膜中。 电绝缘层包括在半导体膜和支撑衬底之间具有面向栅电极的第一电容值的第一区域。 电绝缘层包括具有比半导体膜和支撑衬底面对源电极和漏电极的第一值更高的电容值的第二和第三区域。

公开(公告)号：US20140087524A1

公开(公告)日：2014-03-27

申请号：US14119395

申请日：2011-06-09

Applicant: Nicolas Posseme ,  Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Loubet ,  Maud Vinet

Inventor： Nicolas Posseme ,  Laurent Grenouillet ,  Yannick Le Tiec ,  Nicolas Loubet ,  Maud Vinet

IPC: H01L29/66

CPC classification number: H01L29/66477 ,  H01L21/2652 ,  H01L21/26586 ,  H01L21/823418 ,  H01L21/84 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66772

Abstract: The substrate successively includes a support substrate, an electrically insulating layer, a semiconductor material layer, and a gate pattern. The semiconductor material layer and gate pattern are covered by a covering layer. A first doping impurity is implanted in the semiconductor material layer through the covering layer so as to place the thickness of maximum concentration of the first doping impurity in the first layer. The covering layer is partly eliminated so as to form lateral spacers leaving source/drain electrodes free.

Abstract translation: 基板依次包括支撑基板，电绝缘层，半导体材料层和栅极图案。 半导体材料层和栅极图案被覆盖层覆盖。 第一掺杂杂质通过覆盖层注入到半导体材料层中，以将第一掺杂杂质的最大浓度的厚度置于第一层中。 覆盖层被部分地消除，以形成离开源极/漏电极的横向间隔物。

公开(公告)号：US20120256262A1

公开(公告)日：2012-10-11

申请号：US13439356

申请日：2012-04-04

Applicant: Maud VINET ,  Laurent GRENOUILLET ,  Yannick LE TIEC ,  Nicolas POSSEME

Inventor： Maud VINET ,  Laurent GRENOUILLET ,  Yannick LE TIEC ,  Nicolas POSSEME

IPC: H01L29/772 ,  H01L21/768

CPC classification number: H01L29/78648 ,  H01L21/743 ,  H01L21/76283

Abstract: The field effect transistor comprises a substrate successively comprising an electrically conducting support substrate, an electrically insulating layer and a semiconductor material layer. The counter-electrode is formed in a first portion of the support substrate facing the semi-conductor material layer. The insulating pattern surrounds the semi-conductor material layer to delineate a first active area and it penetrates partially into the support layer to delineate the first portion. An electrically conducting contact passes through the insulating pattern from a first lateral surface in contact with the counter-electrode through to a second surface. The contact is electrically connected to the counter-electrode.

Abstract translation: 场效应晶体管包括依次包括导电支撑衬底，电绝缘层和半导体材料层的衬底。 对置电极形成在支撑基板的面向半导体材料层的第一部分中。 绝缘图案围绕半导体材料层以描绘第一有源区域并且其部分地穿透到支撑层中以描绘第一部分。 导电接触通过绝缘图案从与对电极接触的第一侧表面穿过第二表面。 触点电连接到对电极。