Invention Grant
- Patent Title: Semiconductor devices having insulating substrates and methods of formation thereof
- Patent Title (中): 具有绝缘基板的半导体器件及其形成方法
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Application No.: US13007892Application Date: 2011-01-17
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Publication No.: US08722514B2Publication Date: 2014-05-13
- Inventor: Carsten von Koblinski , Volker Strutz , Manfred Engelhardt
- Applicant: Carsten von Koblinski , Volker Strutz , Manfred Engelhardt
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46 ; H01L23/31
Abstract:
In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate.
Public/Granted literature
- US20120181640A1 Semiconductor Devices Having Insulating Substrates and Methods of Formation Thereof Public/Granted day:2012-07-19
Information query
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