Invention Grant
- Patent Title: FET-type biosensor with surface modification
- Patent Title (中): 具有表面改性的FET型生物传感器
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Application No.: US11336110Application Date: 2006-01-20
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Publication No.: US08735077B2Publication Date: 2014-05-27
- Inventor: Jeo-young Shim , Su-hyeon Kim , Kyu-tae Yoo , Sung-ouk Jung , Joon-shik Park
- Applicant: Jeo-young Shim , Su-hyeon Kim , Kyu-tae Yoo , Sung-ouk Jung , Joon-shik Park
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2005-0005531 20050120
- Main IPC: G01N33/53
- IPC: G01N33/53

Abstract:
Provided is a field effect transistor (FET) type biosensor including a source electrode, a gate, and a drain electrode. A ligand that can bind to a side of a nucleic acid is added to the surface of the gate. In a conventional FET type biosensor, it is difficult to detect a signal within the debye length because a target nucleic acid is directly fixed to the surface of a gate of the conventional FET. However, in the present invention, this problem can be overcome and the debye length can be increased by treating the surface of a gate of an FET sensor with a ligand that can bind to a side of a nucleic acid. The ligand can be adsorbed onto the surface of the gate. In this case, the nucleic acid is adsorbed parallel to the surface of the gate, not perpendicular to the surface of the gate, thus generating an effective depletion region. In addition, hybridization efficiency can be increased because a hybridized sample can be injected into an FET sensor at high ionic strength.
Public/Granted literature
- US20060205013A1 FET-type biosensor with surface modification Public/Granted day:2006-09-14
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