Invention Grant
- Patent Title: Integrated circuit metal gate structure and method of fabrication
- Patent Title (中): 集成电路金属栅极结构及其制造方法
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Application No.: US12276015Application Date: 2008-11-21
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Publication No.: US08735235B2Publication Date: 2014-05-27
- Inventor: Harry Chuang , Kong-Beng Thei , Chiung-Han Yeh , Ming-Yuan Wu , Mong-Song Liang
- Applicant: Harry Chuang , Kong-Beng Thei , Chiung-Han Yeh , Ming-Yuan Wu , Mong-Song Liang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
A method is provided for forming a metal gate using a gate last process. A trench is formed on a substrate. The profile of the trench is modified to provide a first width at the aperture of the trench and a second width at the bottom of the trench. The profile may be formed by including tapered sidewalls. A metal gate may be formed in the trench having a modified profile. Also provided is a semiconductor device including a gate structure having a larger width at the top of the gate than the bottom of the gate.
Public/Granted literature
- US20100044783A1 INTEGRATED CIRCUIT METAL GATE STRUCTURE AND METHOD OF FABRICATION Public/Granted day:2010-02-25
Information query
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