A semiconductor device includes an interlayer insulating film containing Si, O, C, and H, an under-bump metal film disposed over the interlayer insulating film and containing Ni, and a bump electrode disposed over the under-bump metal film. In the interlayer insulating film, a ratio of a peak height of Si—CH3 near a wave number 1270 cm−1 to a peak height of Si—O near a wave number 1030 cm−1 obtained by Fourier-transform infrared spectroscopy (FTIR) is 0.15 or greater and 0.27 or less. A ratio of a peak height of Si—CH2—Si near a wave number 1360 cm−1 to the peak height of Si—CH3 near the wave number 1270 cm−1 is 0.031 or greater.