Invention Grant
US08736052B2 Semiconductor device including diffusion soldered layer on sintered silver layer
有权
包括在烧结银层上的扩散焊接层的半导体器件
- Patent Title: Semiconductor device including diffusion soldered layer on sintered silver layer
- Patent Title (中): 包括在烧结银层上的扩散焊接层的半导体器件
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Application No.: US13214379Application Date: 2011-08-22
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Publication No.: US08736052B2Publication Date: 2014-05-27
- Inventor: Niels Oeschler , Kirill Trunov , Roland Speckels
- Applicant: Niels Oeschler , Kirill Trunov , Roland Speckels
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/40
- IPC: H01L29/40
Abstract:
A semiconductor device includes a substrate and a first sintered silver layer on the substrate. The semiconductor device includes a first semiconductor chip and a first diffusion soldered layer coupling the first semiconductor chip to the first sintered silver layer.
Public/Granted literature
- US20130049204A1 SEMICONDUCTOR DEVICE INCLUDING DIFFUSION SOLDERED LAYER ON SINTERED SILVER LAYER Public/Granted day:2013-02-28
Information query
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