Invention Grant
US08741784B2 Process for fabricating semiconductor device and method of fabricating metal oxide semiconductor device
有权
制造半导体器件的方法和制造金属氧化物半导体器件的方法
- Patent Title: Process for fabricating semiconductor device and method of fabricating metal oxide semiconductor device
- Patent Title (中): 制造半导体器件的方法和制造金属氧化物半导体器件的方法
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Application No.: US13237232Application Date: 2011-09-20
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Publication No.: US08741784B2Publication Date: 2014-06-03
- Inventor: Chien-Liang Lin , Te-Lin Sun , Ying-Wei Yen , Yu-Ren Wang
- Applicant: Chien-Liang Lin , Te-Lin Sun , Ying-Wei Yen , Yu-Ren Wang
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; H01L21/02 ; H01L21/28 ; H01L21/8238 ; H01L29/51
Abstract:
A process for fabricating a semiconductor device is described. A silicon oxide layer is formed. A nitridation process including at least two steps is performed to nitridate the silicon oxide layer into a silicon oxynitride (SiON) layer. The nitridation process comprises a first nitridation step and a second nitridation step in sequence, wherein the first nitridation step and the second nitridation step are different in the setting of at least one parameter.
Public/Granted literature
- US20130072028A1 PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING METAL OXIDE SEMICONDUCTOR DEVICE Public/Granted day:2013-03-21
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