Invention Grant
- Patent Title: Vertical power transistor die packages and associated methods of manufacturing
- Patent Title (中): 垂直功率晶体管管芯封装及相关制造方法
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Application No.: US13099252Application Date: 2011-05-02
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Publication No.: US08742490B2Publication Date: 2014-06-03
- Inventor: Donald R. Disney
- Applicant: Donald R. Disney
- Applicant Address: US CA San Jose
- Assignee: Monolithic Power Systems, Inc.
- Current Assignee: Monolithic Power Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Perkins Coie LLP
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L21/60
Abstract:
The present technology is directed generally to a semiconductor device. In one embodiment, the semiconductor device includes a first vertical transistor and a second vertical transistor, and the first vertical transistor is stacked on top of the second vertical transistor. The first vertical transistor is mounted on a lead frame with the source electrode of the first vertical transistor coupled to the lead frame. The second vertical transistor is stacked on the first vertical transistor with the source electrode of the second vertical transistor coupled to the drain electrode of the first vertical transistor.
Public/Granted literature
- US20120280308A1 VERTICAL POWER TRANSISTOR DIE PACKAGES AND ASSOCIATED METHODS OF MANUFACTURING Public/Granted day:2012-11-08
Information query
IPC分类:
