Invention Grant
US08748217B2 Metal-based solution treatment of CIGS absorber layer in thin-film solar cells
有权
薄膜太阳能电池中CIGS吸收层的金属溶液处理
- Patent Title: Metal-based solution treatment of CIGS absorber layer in thin-film solar cells
- Patent Title (中): 薄膜太阳能电池中CIGS吸收层的金属溶液处理
-
Application No.: US13675017Application Date: 2012-11-13
-
Publication No.: US08748217B2Publication Date: 2014-06-10
- Inventor: Chih-Ching Lin , Yong-Ping Chan , Kai-Yu Tung , Cheng-Tao Lee
- Applicant: TSMC Solar Ltd.
- Applicant Address: TW Taichung
- Assignee: TSMC Solar Ltd.
- Current Assignee: TSMC Solar Ltd.
- Current Assignee Address: TW Taichung
- Agency: Duane Morris LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for manufacturing a thin film solar cell device includes forming a back contact layer on a substrate, forming an CIGS absorber layer on the back contact layer, treating the CIGS absorber layer with a metal-based alkaline solution, and forming a buffer layer on the CIGS absorber layer where the treatment of the CIGS absorber layer improves the adhesion between the CIGS absorber layer and the buffer layer and also improves the quality of the p-n junction at the CIGS absorber layer/buffer layer interface.
Public/Granted literature
- US20140134784A1 METAL-BASED SOLUTION TREATMENT OF CIGS ABSORBER LAYER IN THIN-FILM SOLAR CELLS Public/Granted day:2014-05-15
Information query
IPC分类:
