公开(公告)号：US09929304B2

公开(公告)日：2018-03-27

申请号：US14685667

申请日：2015-04-14

Applicant: TSMC Solar Ltd.

Inventor： Edward Teng ,  Ying-Chen Chao ,  Chih-Jen Yang

IPC: F27B5/14 ,  F27B5/06 ,  F27D3/12 ,  F27D11/02 ,  H01L31/18 ,  C23C14/22 ,  F27D5/00 ,  H01L31/032 ,  H01L21/67 ,  H01L21/687 ,  C23C14/18 ,  C23C14/34 ,  C23C14/58 ,  F27D3/00

CPC classification number: H01L31/1864 ,  C23C14/18 ,  C23C14/34 ,  C23C14/5806 ,  F27B5/14 ,  F27D5/0037 ,  F27D2003/0087 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771 ,  H01L31/0322 ,  H01L31/18 ,  Y02E10/541

Abstract: An apparatus for forming a solar cell includes a housing defining a vacuum chamber, a rotatable substrate support, at least one inner heater and at least one outer heater. The substrate support is inside the vacuum chamber configured to hold a substrate. The at least one inner heater is between a center of the vacuum chamber and the substrate support, and is configured to heat a back surface of a substrate on the substrate support. The at least one outer heater is between an outer surface of the vacuum chamber and the substrate support, and is configured to heat a front surface of a substrate on the substrate support.

公开(公告)号：US09689912B2

公开(公告)日：2017-06-27

申请号：US13708019

申请日：2012-12-07

Applicant: TSMC Solar Ltd.

Inventor： Ming-Tien Tsai ,  Tzu-Huan Cheng

IPC: G01R27/08 ,  G01R31/26 ,  H02S50/10 ,  H02S50/00

CPC classification number: G01R31/2642 ,  H02S50/00 ,  H02S50/10

Abstract: A method and apparatus for measuring thickness of a film in a solar cell provides for directing light emitted at multiple emission wavelengths, to a surface of the solar cell. Each emission results in the generation of a responsive photo current. The photo currents are read by a current meter having one contact coupled to a surface of the solar cell and another contact coupled to another surface. The currents associated with each of the different light emissions are identified and the thickness of a film in the solar cell is calculated based on the two currents or associated quantum efficiencies, and associated absorption coefficients. In one embodiment, the film thickness is the thickness of a CdS or other buffer film in a thin film solar cell.

公开(公告)号：US09685569B2

公开(公告)日：2017-06-20

申请号：US14203722

申请日：2014-03-11

Applicant: TSMC Solar Ltd.

Inventor： Shih-Wei Chen

IPC: B05D5/12 ,  H01L31/032 ,  H01L31/0224

CPC classification number: H01L31/0322 ,  H01L31/022466 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method of forming a CIGS absorber wherein at least one source particle is selected and prepared as a powder or gel; the powder or gel is deposited on a substrate, compressed, and annealed. In some embodiments, a plurality of source particles are prepared as powders and mixed prior to deposition, compression, and annealing. In other embodiments, a plurality of source particles are individually deposited in layers, collectively compressed, and collectively annealed. In yet further embodiments, a plurality of source particles are individually deposited in layers, individually compressed, and collectively annealed.

公开(公告)号：US09537031B2

公开(公告)日：2017-01-03

申请号：US13929827

申请日：2013-06-28

Applicant: TSMC Solar Ltd.

Inventor： Shih-Wei Chen

IPC: H01L21/00 ,  H01L31/0463 ,  H01L21/67

CPC classification number: H01L31/0463 ,  H01L21/6715 ,  Y02E10/50

Abstract: A method for fabricating a solar cell using a nozzle assembly that includes a base portion, a scriber coupled to the base portion, and a nozzle coupled to the base portion such that the nozzle is positioned a predefined distance from a tip of the scriber is provided. The method generally comprises positioning a substructure that includes a buffer layer and an absorber layer proximate to the base portion. A P2 line is scribed through the buffer and absorber layers of the substructure using the scriber tip. A nanoparticle solution is sprayed, using the nozzle, onto at least one portion of the buffer layer at a predefined pressure when the P2 line is being scribed through the buffer and absorber layers such that a transparent conductive oxide (TCO) layer is inhibited from forming over the portion of the buffer layer that is being sprayed with the nanoparticle solution.

Abstract translation: 提供一种使用喷嘴组件制造太阳能电池的方法，所述喷嘴组件包括基部，连接到所述基部的划线器和连接到所述基部的喷嘴，使得所述喷嘴位于距离所述划线器的尖端预定距离的位置 。 该方法通常包括定位包括缓冲层和接近基部的吸收层的子结构。 使用划线器尖端通过底层结构的缓冲层和吸收层划线P2线。 当P2线通过缓冲层和吸收层进行划线时，使用喷嘴将纳米颗粒溶液以预定的压力喷射到缓冲层的至少一部分上，使得透明导电氧化物（TCO）层被抑制形成 在被纳米颗粒溶液喷射的缓冲层的部分上。

公开(公告)号：US20160111585A1

公开(公告)日：2016-04-21

申请号：US14517959

申请日：2014-10-20

Applicant: TSMC Solar Ltd.

Inventor： Shih-Wei CHEN

IPC: H01L31/18 ,  H01L31/032

CPC classification number: H01L31/186 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02628 ,  H01L21/02664 ,  H01L31/0322 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: Methods and systems for repairing oxidation of CIGS surfaces during manufacture of a CIGS solar cell are generally disclosed. Oxidation of an absorber reduces the photoluminescence intensity of the CIGS surface. The absorber is immersed in a reduction tank having a reducing reagent therein. The reducing reagent reverses the oxidation of the CIGS absorber, increasing the interface quality and corresponding photoluminescence intensity. After reversing the oxidation, a buffer layer is deposited on the CIGS absorber to prevent further surface oxidation.

Abstract translation: 通常公开了在制造CIGS太阳能电池期间修复CIGS表面氧化的方法和系统。 吸收剂的氧化降低了CIGS表面的光致发光强度。 吸收器浸入其中具有还原剂的还原罐中。 还原剂反转CIGS吸收剂的氧化，增加界面质量和相应的光致发光强度。 在反转氧化之后，缓冲层沉积在CIGS吸收器上以防止进一步的表面氧化。

公开(公告)号：US09178103B2

公开(公告)日：2015-11-03

申请号：US13962979

申请日：2013-08-09

Applicant: TSMC Solar Ltd.

Inventor： Chung-Hsien Wu ,  Wen-Tsai Yen ,  Jyh-Lih Wu

IPC: H01L31/0392 ,  H01L31/18 ,  C23C12/00

CPC classification number: H01L31/18 ,  C23C12/00 ,  H01L31/0322 ,  H01L31/03923 ,  Y02E10/541

Abstract: A method and system for forming chalcogenide semiconductor absorber materials with sodium impurities is provided. The system includes a sodium vaporizer in which a solid sodium source material is vaporized. The sodium vapor is added to reactant gases and/or annealing gases and directed to a furnace that includes a substrate with a metal precursor material. The precursor material reacts with reactant gases such as S-containing gases and Se-containing gases according to various process sequences. In one embodiment, a selenization operation is followed by an annealing operation and a sulfurization operation and the sodium vapor is caused to react with the metal precursor during at least one of the annealing and the sulfurization steps to produce a chalcogenide semiconductor absorber material that includes sodium dopant impurities.

Abstract translation: 提供了用钠杂质形成硫族化物半导体吸收材料的方法和系统。 该系统包括其中固体钠源材料蒸发的钠蒸发器。 将钠蒸汽加入到反应气体和/或退火气体中并引导到包括具有金属前体材料的基底的炉子。 根据各种工艺顺序，前体材料与诸如含S气体和含Se气体的反应气体反应。 在一个实施方案中，硒化操作之后是退火操作和硫化操作，并且在退火和硫化步骤中的至少一个期间使钠蒸气与金属前体反应以产生包含钠的硫族化物半导体吸收材料 掺杂杂质。

公开(公告)号：US20150303326A1

公开(公告)日：2015-10-22

申请号：US14256049

申请日：2014-04-18

Applicant: TSMC SOLAR LTD.

Inventor： Tzu-Huan CHENG

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/0749 ,  H01L31/02 ,  H01L31/042 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/0504 ,  Y02E10/541 ,  Y02P70/521

Abstract: A solar cell has a first back contact and a first absorber over the first back contact. The first absorber has a scribe line through it. A first front contact is provided over the first absorber. A first conductive material is provided over a portion of the first front contact. The first conductive material extends through the scribe line and connects to a second back contact of a second solar cell.

Abstract translation: 太阳能电池具有第一后接触和在第一背接触上的第一吸收体。 第一个吸收器具有通过它的划线。 在第一吸收器上提供第一前接触件。 第一导电材料设置在第一前触点的一部分上。 第一导电材料延伸穿过划线并连接到第二太阳能电池的第二背接触。

公开(公告)号：US09159863B2

公开(公告)日：2015-10-13

申请号：US13967549

申请日：2013-08-15

Applicant: TSMC Solar Ltd.

Inventor： Chung-Hsien Wu ,  Wen-Chin Lee

IPC: H01L21/00 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/0322 ,  Y02E10/541

Abstract: In a method of forming a CIGS film absorption layer, a first precursor is provided including a first substrate having a major process precursor film formed thereon, the major process precursor film containing two or more of Cu, In, Ga, and Se. A second precursor is provided including a second substrate having an element supplying precursor film formed thereon, the element supply precursor film containing two or more of Cu, In, Ga and Se. The precursors are oriented with the major process precursor film and element supplying precursor film facing one another so as to allow diffusion of elements between the films during annealing. The oriented films are annealed and then the precursors are separated, wherein the CIGS film is formed over the first substrate and either a CIGS film or a precursor film containing two or more of Cu, In, Ga, and Se remains over the second substrate.

Abstract translation: 在形成CIGS膜吸收层的方法中，提供第一前体，其包括其上形成有主要工艺前体膜的第一衬底，所述主要工艺前体膜含有Cu，In，Ga和Se中的两种或更多种。 提供了第二前体，其包括具有形成在其上的元件供给前体膜的第二基板，所述元件供给前体膜包含Cu，In，Ga和Se中的两种或更多种。 前体被取向为主要的工艺前体膜和元素供应前体膜彼此面对，以便允许元素在退火期间在膜之间扩散。 对取向膜进行退火，然后将前体分离，其中CIGS膜形成在第一衬底上，并且CIGS膜或含有两个或更多个Cu，In，Ga和Se的前体膜保留在第二衬底上。

公开(公告)号：US20150287843A1

公开(公告)日：2015-10-08

申请号：US14244016

申请日：2014-04-03

Applicant: TSMC SOLAR LTD.

Inventor： Tzu-Huan CHENG

IPC: H01L31/0216 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/0224

CPC classification number: H01L31/02167 ,  H01L31/046 ,  H01L31/062 ,  H01L31/0749 ,  Y02E10/541

Abstract: A solar cell includes a back contact layer, an absorber layer above the back contact layer, a dielectric layer above the absorber layer, and a front contact layer above the dielectric layer.

Abstract translation: 太阳能电池包括背接触层，在后接触层上方的吸收层，在吸收层上方的电介质层和介电层上方的前接触层。

公开(公告)号：US20150263198A1

公开(公告)日：2015-09-17

申请号：US14203722

申请日：2014-03-11

Applicant: TSMC Solar Ltd.

Inventor： Shih-Wei CHEN

IPC: H01L31/032 ,  H01L31/18

CPC classification number: H01L31/0322 ,  H01L31/022466 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method of forming a CIGS absorber wherein at least one source particle is selected and prepared as a powder or gel; the powder or gel is deposited on a substrate, compressed, and annealed. In some embodiments, a plurality of source particles are prepared as powders and mixed prior to deposition, compression, and annealing. In other embodiments, a plurality of source particles are individually deposited in layers, collectively compressed, and collectively annealed. In yet further embodiments, a plurality of source particles are individually deposited in layers, individually compressed, and collectively annealed.

Abstract translation: 一种形成CIGS吸收剂的方法，其中选择和制备至少一种源粒子作为粉末或凝胶; 将粉末或凝胶沉积在基底上，进行压缩和退火。 在一些实施方案中，多个源粒子被制备成粉末并在沉积，压缩和退火之前混合。 在其他实施例中，多个源粒子被分别沉积成层，共同压缩并且共同退火。 在另外的实施例中，多个源粒子被分别沉积成层，分别压缩并且共同退火。