Invention Grant
- Patent Title: Electroforming technique for mask formation
- Patent Title (中): 用于掩模形成的电铸技术
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Application No.: US12897618Application Date: 2010-10-04
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Publication No.: US08748313B2Publication Date: 2014-06-10
- Inventor: Hsin Chin Chen
- Applicant: Hsin Chin Chen
- Applicant Address: CN Shanghai CN Beijing
- Assignee: Semiconductor Manufaturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufaturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN200910197615 20091023
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method for making a mask for semiconductor manufacturing. The method includes providing a base layer, forming a conductive layer on the base layer, and forming a photoresist layer on the conductive layer. Additionally, the method includes exposing selectively the photoresist layer to an energy illumination, developing the photoresist layer by removing a first portion of the photoresist layer, and depositing a metal layer by an electroforming process. The electroforming process includes submerging the conductive layer into a chemical bath, and applying a deposition voltage across a negative electrode and a positive electrode. Moreover, the method includes removing a second portion of the photoresist layer, and removing a first portion of the conductive layer.
Public/Granted literature
- US20120115328A1 ELECTROFORMING TECHNIQUE FOR MASK FORMATION Public/Granted day:2012-05-10
Information query
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