Invention Grant
- Patent Title: Nanocrystal doped matrixes
- Patent Title (中): 纳米晶体掺杂基质
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Application No.: US12039018Application Date: 2008-02-28
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Publication No.: US08749130B2Publication Date: 2014-06-10
- Inventor: J. Wallace Parce , Jian Chen , Robert S. Dubrow , William P. Freeman , Erik C. Scher , Jeffery A. Whiteford
- Applicant: J. Wallace Parce , Jian Chen , Robert S. Dubrow , William P. Freeman , Erik C. Scher , Jeffery A. Whiteford
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Main IPC: H01J1/62
- IPC: H01J1/62 ; H01J63/04 ; C09K11/54 ; C09K11/56 ; C09K11/02

Abstract:
The present invention provides matrixes doped with semiconductor nanocrystals. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. The present invention also provides processes for producing matrixes comprising semiconductor nanocrystals.
Public/Granted literature
- US20090121190A1 Nanocrystal Doped Matrixes Public/Granted day:2009-05-14
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